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dc.contributor.authorUzunoglu, Vasil
dc.date.accessioned2016-05-14T00:45:35Zen
dc.date.available2016-05-14T00:45:35Zen
dc.date.issued1975-10en
dc.identifier.issn0884-5123en
dc.identifier.issn0074-9079en
dc.identifier.urihttp://hdl.handle.net/10150/609374en
dc.descriptionInternational Telemetering Conference Proceedings / October 14-16, 1975 / Sheraton Inn, Silver Spring, Marylanden_US
dc.description.abstractThe analog memory device is a combination of a bipolar and a MOSFET device which stores information in analog form for several hours or more with no degradation of data. The emitter base junction of a bipolar transistor is covered with an SiO₂ layer and a voltage is applied to this point. With zero volts applied, the unit acts as a bipolar transistor. Increasing the voltage at this point increases the emitter injection efficiency of the bipolar transistor, which in turn increases the current gain of the device. An SiO₂ layer with no leakage paths can retain the charge applied to it for long periods of time; thus the gain will remain at this level as long as the charge remains on the oxide layer. A large number of such devices can be fabricated on a single chip. Such devices combined with other integrated circuits can be used, for example, for automatic equalization of transmission lines, echo suppression, and correlation detection.
dc.description.sponsorshipInternational Foundation for Telemeteringen
dc.language.isoen_USen
dc.publisherInternational Foundation for Telemeteringen
dc.relation.urlhttp://www.telemetry.org/en
dc.rightsCopyright © International Foundation for Telemeteringen
dc.titleAn Analog Memory Deviceen_US
dc.typetexten
dc.typeProceedingsen
dc.contributor.departmentCOMSAT Laboratoriesen
dc.identifier.journalInternational Telemetering Conference Proceedingsen
dc.description.collectioninformationProceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.en
refterms.dateFOA2018-06-16T05:30:42Z
html.description.abstractThe analog memory device is a combination of a bipolar and a MOSFET device which stores information in analog form for several hours or more with no degradation of data. The emitter base junction of a bipolar transistor is covered with an SiO₂ layer and a voltage is applied to this point. With zero volts applied, the unit acts as a bipolar transistor. Increasing the voltage at this point increases the emitter injection efficiency of the bipolar transistor, which in turn increases the current gain of the device. An SiO₂ layer with no leakage paths can retain the charge applied to it for long periods of time; thus the gain will remain at this level as long as the charge remains on the oxide layer. A large number of such devices can be fabricated on a single chip. Such devices combined with other integrated circuits can be used, for example, for automatic equalization of transmission lines, echo suppression, and correlation detection.


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