Solid State Microwave Power Amplifiers - An Overview

Abstract

This paper summarizes results that have been achieved with various types of microwave solid state power amplifying devices and presents some projections of advances that can be expected within approximately a five year period. The frequency band surveyed extends from 1 to 100 GHz. The emphasis is on CW or high duty cycle pulse applications, where long life is of great importance, such as in a satellite communication system. The types of devices considered include the gallium arsenide field-effect transistor (GaAs FET), IMPATT diodes, bipolar transistors, Gunn diodes, TRAPATT diodes and electron bombarded semiconductor (EBS) devices. An overview of the technology of microwave power combiners is also included.