Solid State Microwave Power Amplifiers - An Overview
| dc.contributor.author | Lewinter, S. W. | |
| dc.date.accessioned | 2016-05-19T22:49:47Z | |
| dc.date.available | 2016-05-19T22:49:47Z | |
| dc.date.issued | 1978-11 | |
| dc.identifier.issn | 0884-5123 | |
| dc.identifier.issn | 0074-9079 | |
| dc.identifier.uri | http://hdl.handle.net/10150/609979 | |
| dc.description | International Telemetering Conference Proceedings / November 14-16, 1978 / Hyatt House Hotel, Los Angeles, California | en_US |
| dc.description.abstract | This paper summarizes results that have been achieved with various types of microwave solid state power amplifying devices and presents some projections of advances that can be expected within approximately a five year period. The frequency band surveyed extends from 1 to 100 GHz. The emphasis is on CW or high duty cycle pulse applications, where long life is of great importance, such as in a satellite communication system. The types of devices considered include the gallium arsenide field-effect transistor (GaAs FET), IMPATT diodes, bipolar transistors, Gunn diodes, TRAPATT diodes and electron bombarded semiconductor (EBS) devices. An overview of the technology of microwave power combiners is also included. | |
| dc.description.sponsorship | International Foundation for Telemetering | en |
| dc.language.iso | en_US | en |
| dc.publisher | International Foundation for Telemetering | en |
| dc.relation.url | http://www.telemetry.org/ | en |
| dc.rights | Copyright © International Foundation for Telemetering | en |
| dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | |
| dc.title | Solid State Microwave Power Amplifiers - An Overview | en_US |
| dc.type | text | en |
| dc.type | Proceedings | en |
| dc.contributor.department | The Aerospace Corporation | en |
| dc.identifier.journal | International Telemetering Conference Proceedings | en |
| dc.description.collectioninformation | Proceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection. | en |
| refterms.dateFOA | 2018-04-26T05:29:30Z | |
| html.description.abstract | This paper summarizes results that have been achieved with various types of microwave solid state power amplifying devices and presents some projections of advances that can be expected within approximately a five year period. The frequency band surveyed extends from 1 to 100 GHz. The emphasis is on CW or high duty cycle pulse applications, where long life is of great importance, such as in a satellite communication system. The types of devices considered include the gallium arsenide field-effect transistor (GaAs FET), IMPATT diodes, bipolar transistors, Gunn diodes, TRAPATT diodes and electron bombarded semiconductor (EBS) devices. An overview of the technology of microwave power combiners is also included. |
