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dc.contributor.authorMallette, Leo A.
dc.contributor.authorPhillips, Ronald L.
dc.date.accessioned2016-06-10T21:51:19Z
dc.date.available2016-06-10T21:51:19Z
dc.date.issued1983-10
dc.identifier.issn0884-5123
dc.identifier.issn0074-9079
dc.identifier.urihttp://hdl.handle.net/10150/612601
dc.descriptionInternational Telemetering Conference Proceedings / October 24-27, 1983 / Sheraton-Harbor Island Hotel and Convention Center, San Diego, Californiaen_US
dc.description.abstractSilicon solar cells have traditionally been used for conversion of direct sunlight to energy. These cells can also be used as low rate optical detectors. The internal resistances and capacitances, however, limit the usable bandwidth. Under forward bias conditions, diodes exhibit, in addition to the depletion layer capacitance, a diffusion capacitance caused by the rearrangement of minority carriers. A similar process occurs in solar cells when photons are absorbed and electron-hole pairs are produced. This paper presents a method successfully used by the authors to determine this unknown term as a function of background illumination.
dc.description.sponsorshipInternational Foundation for Telemeteringen
dc.language.isoen_USen
dc.publisherInternational Foundation for Telemeteringen
dc.relation.urlhttp://www.telemetry.org/en
dc.rightsCopyright © International Foundation for Telemeteringen
dc.titleTHE OPTICAL TRANSFER FUNCTION OF SILICON SOLAR CELLS: THEORY AND EXPERIMENTen_US
dc.typetexten
dc.typeProceedingsen
dc.contributor.departmentHughes Aircraft Companyen
dc.contributor.departmentElectrical Engineering and Communication Sciences Department University of Central Floridaen
dc.identifier.journalInternational Telemetering Conference Proceedingsen
dc.description.collectioninformationProceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.en
refterms.dateFOA2018-09-11T12:32:50Z
html.description.abstractSilicon solar cells have traditionally been used for conversion of direct sunlight to energy. These cells can also be used as low rate optical detectors. The internal resistances and capacitances, however, limit the usable bandwidth. Under forward bias conditions, diodes exhibit, in addition to the depletion layer capacitance, a diffusion capacitance caused by the rearrangement of minority carriers. A similar process occurs in solar cells when photons are absorbed and electron-hole pairs are produced. This paper presents a method successfully used by the authors to determine this unknown term as a function of background illumination.


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