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dc.contributor.advisorFallahi, Mahmouden
dc.contributor.authorMeyer, Jason T.
dc.creatorMeyer, Jason T.en
dc.date.accessioned2016-06-16T18:38:23Z
dc.date.available2016-06-16T18:38:23Z
dc.date.issued2016
dc.identifier.urihttp://hdl.handle.net/10150/613424
dc.description.abstractThe design, simulation, and initial fabrication of a novel ultra-compact 2x2 silicon multimode-interference device evanescently coupled to a dual germanium metal-semiconductor-metal (MSM) photodetector is presented. For operation at the standard telecom wavelength of 1.5 µm, the simulations demonstrate high-speed operation at 30 GHz, low dark current in the nanoamp range, and external quantum efficiency of 80%. Error analysis was performed for possible tilt error introduced by hybrid integration of the MSM layer on top of the MMI waveguides by use of surface mount technology (SMT) and direct wafer bonding.
dc.language.isoen_USen
dc.publisherThe University of Arizona.en
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en
dc.subjectcoherent photodetectoren
dc.subjectMetal-semiconductor-metalen
dc.subjectMultimode interferenceen
dc.subjectsilicon photonicsen
dc.subjectOptical Sciencesen
dc.subjectBalanced photodetectoren
dc.titleUltra-compact Integrated Silicon Photonics Balanced Coherent Photodetectorsen_US
dc.typetexten
dc.typeElectronic Thesisen
thesis.degree.grantorUniversity of Arizonaen
thesis.degree.levelmastersen
dc.contributor.committeememberNorwood, Robert A.en
dc.contributor.committeememberPau, Stanleyen
thesis.degree.disciplineGraduate Collegeen
thesis.degree.disciplineOptical Sciencesen
thesis.degree.nameM.S.en
refterms.dateFOA2018-06-18T11:29:21Z
html.description.abstractThe design, simulation, and initial fabrication of a novel ultra-compact 2x2 silicon multimode-interference device evanescently coupled to a dual germanium metal-semiconductor-metal (MSM) photodetector is presented. For operation at the standard telecom wavelength of 1.5 µm, the simulations demonstrate high-speed operation at 30 GHz, low dark current in the nanoamp range, and external quantum efficiency of 80%. Error analysis was performed for possible tilt error introduced by hybrid integration of the MSM layer on top of the MMI waveguides by use of surface mount technology (SMT) and direct wafer bonding.


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