IMPACT OF MOLECULAR BEAM EPITAXY TECHNOLOGY ON SPREAD SPECTRUM SYSTEMS

Abstract

The ultimate limitations in system performance capabilities are often due to constraints imposed by various device or chip fabrication processes. Recent advances in semiconductor processing technology have helped to lift some of the device performance barriers that have a negative impact on system performance. Molecular Beam Epitaxy is one particular technique that has the capability to fabricate a wide range of high performance semiconductor devices with high levels of reliability and yield. Molecular Beam Epitaxy (MBE) is an ultrahigh vacuum evaporation process for growing epitaxial films on various substrate materials. The basic constituents of the films are thermally evaporated and directed toward a heated substrate. The evaporated materials are deposited on the heated substrate surface forming a film. MBE offers the ability to maintain a higher level of precise control over material composition and film thickness required for semiconductor devices utilized in microwave and millimeter wave spread spectrum system applications.