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dc.contributor.authorNgan, Y.C.
dc.contributor.authorSun, C.
dc.date.accessioned2016-06-28T18:23:34Z
dc.date.available2016-06-28T18:23:34Z
dc.date.issued1981-10
dc.identifier.issn0884-5123
dc.identifier.issn0074-9079
dc.identifier.urihttp://hdl.handle.net/10150/614939
dc.descriptionInternational Telemetering Conference Proceedings / October 13-15, 1981 / Bahia Hotel, San Diego, Californiaen_US
dc.description.abstractTwo amplifier developments centered at 20 GHz based on GaAs IMPATT diodes will be discussed. The on-going developments of a 20 GHz communication amplifier sponsored by NASA Lewis using injection locking and resonant cavity combiner will be reviewed. A wideband 20 GHz amplifier to achieve 20 Watt 1 GHz bandwidth based on 3-dB hybrid couplers and stable mode of amplification, along with the results obtained from the constant voltage mode of amplification will be discussed. A wideband solid state amplifier designed as a driver for a 44 GHz terminal transmitter will be described. The amplifier is designed for 2 GHz 1-dB bandwidth centered at 44.5 GHz, with an overall gain of 40 dB. A six-stage design is used to accomplish 500 mW output power. Low cost construction and mechanical ruggedness are emphasized in this design.
dc.description.sponsorshipInternational Foundation for Telemeteringen
dc.language.isoen_USen
dc.publisherInternational Foundation for Telemeteringen
dc.relation.urlhttp://www.telemetry.org/en
dc.rightsCopyright © International Foundation for Telemeteringen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/
dc.titleSOLID STATE WIDEBAND POWER AMPLIFIER DEVELOPMENT AT 20 AND 44 GHzen_US
dc.typetexten
dc.typeProceedingsen
dc.contributor.departmentTRWen
dc.identifier.journalInternational Telemetering Conference Proceedingsen
dc.description.collectioninformationProceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection.en
refterms.dateFOA2018-08-19T12:27:44Z
html.description.abstractTwo amplifier developments centered at 20 GHz based on GaAs IMPATT diodes will be discussed. The on-going developments of a 20 GHz communication amplifier sponsored by NASA Lewis using injection locking and resonant cavity combiner will be reviewed. A wideband 20 GHz amplifier to achieve 20 Watt 1 GHz bandwidth based on 3-dB hybrid couplers and stable mode of amplification, along with the results obtained from the constant voltage mode of amplification will be discussed. A wideband solid state amplifier designed as a driver for a 44 GHz terminal transmitter will be described. The amplifier is designed for 2 GHz 1-dB bandwidth centered at 44.5 GHz, with an overall gain of 40 dB. A six-stage design is used to accomplish 500 mW output power. Low cost construction and mechanical ruggedness are emphasized in this design.


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