20 GHz MULTISTAGE FET POWER AMPLIFIERS
| dc.contributor.author | Sokolov, V. | |
| dc.contributor.author | Saunier, P. | |
| dc.contributor.author | Bennett, R.C. | |
| dc.contributor.author | Lehmann, R.E. | |
| dc.date.accessioned | 2016-06-28T19:18:30Z | |
| dc.date.available | 2016-06-28T19:18:30Z | |
| dc.date.issued | 1981-10 | |
| dc.identifier.issn | 0884-5123 | |
| dc.identifier.issn | 0074-9079 | |
| dc.identifier.uri | http://hdl.handle.net/10150/614941 | |
| dc.description | International Telemetering Conference Proceedings / October 13-15, 1981 / Bahia Hotel, San Diego, California | en_US |
| dc.description.abstract | A GaAs FET power amplifier module operating in K-band is described. The module has integral input and output WR-51 waveguide ports and incorporates a pair of low-loss waveguide to microstrip transitions. Single-stage and multi-stage microstrip FET amplifiers are fabricated on individual copper carrier blocks incorporating in-package impedance matching. Six packaged amplifiers are cascaded to achieve a 0.5 W, 30 dB gain amplifier module operating over the 17.7-20.2 GHz band. | |
| dc.description.sponsorship | International Foundation for Telemetering | en |
| dc.language.iso | en_US | en |
| dc.publisher | International Foundation for Telemetering | en |
| dc.relation.url | http://www.telemetry.org/ | en |
| dc.rights | Copyright © International Foundation for Telemetering | en |
| dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | |
| dc.title | 20 GHz MULTISTAGE FET POWER AMPLIFIERS | en_US |
| dc.type | text | en |
| dc.type | Proceedings | en |
| dc.contributor.department | Texas Instruments Incorporated Central Research Laboratories | en |
| dc.identifier.journal | International Telemetering Conference Proceedings | en |
| dc.description.collectioninformation | Proceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection. | en |
| refterms.dateFOA | 2018-09-11T14:01:49Z | |
| html.description.abstract | A GaAs FET power amplifier module operating in K-band is described. The module has integral input and output WR-51 waveguide ports and incorporates a pair of low-loss waveguide to microstrip transitions. Single-stage and multi-stage microstrip FET amplifiers are fabricated on individual copper carrier blocks incorporating in-package impedance matching. Six packaged amplifiers are cascaded to achieve a 0.5 W, 30 dB gain amplifier module operating over the 17.7-20.2 GHz band. |
