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    The formation mechanism of gradient porous Si in a contactless electrochemical process

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    Author
    Zhao, Mingrui
    McCormack, Angelin
    Keswani, Manish
    Affiliation
    Univ Arizona, Chem & Environm Engn
    Univ Arizona, Mat Sci & Engn
    Issue Date
    2016
    
    Metadata
    Show full item record
    Publisher
    ROYAL SOC CHEMISTRY
    Citation
    The formation mechanism of gradient porous Si in a contactless electrochemical process 2016, 4 (19):4204 J. Mater. Chem. C
    Journal
    JOURNAL OF MATERIALS CHEMISTRY C
    Rights
    CC-BY: This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
    Collection Information
    This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.
    Abstract
    Recently, gradient porous silicon has been developed to meet the requirements of various applications due to its unique physical and chemical properties. In this paper, the formation mechanism and morphology of radially symmetric gradient porous silicon films fabricated using a contactless method and their dependence on different process parameters, such as HF concentration, solution pH, current density and wafer resistivity, have been investigated in detail. The design and geometry of the sample assembly allow decreasing current density radially inward on the silicon surface in contact with HF based etchant solution. In the presence of surfactants, an increase in the distribution range of porosity, pore diameter and depth was observed by increasing HF concentration or lowering pH of the etchant solution, as the formation of pores was considered to be limited by the etch rates of silicon dioxide. Gradient porous silicon was also found to be successfully formulated both at high (10 mA cm2 ) and low (3 mA cm2 ) current densities. Interestingly, the morphological gradient was not developed when dimethyl sulfoxide (instead of surfactants) was used in the etchant solution potentially due to limitations in the availability of oxidizing species at the silicon–etchant solution interface.
    Note
    Open access provided by RSC Gold Voucher.
    ISSN
    2050-7526
    2050-7534
    DOI
    10.1039/C6TC00309E
    Version
    Final published version
    Additional Links
    http://xlink.rsc.org/?DOI=C6TC00309E
    ae974a485f413a2113503eed53cd6c53
    10.1039/C6TC00309E
    Scopus Count
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    UA Faculty Publications

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