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dc.contributor.authorZhao, Mingrui
dc.contributor.authorMcCormack, Angelin
dc.contributor.authorKeswani, Manish
dc.date.accessioned2016-07-06T00:22:11Z
dc.date.available2016-07-06T00:22:11Z
dc.date.issued2016
dc.identifier.citationThe formation mechanism of gradient porous Si in a contactless electrochemical process 2016, 4 (19):4204 J. Mater. Chem. Cen
dc.identifier.issn2050-7526
dc.identifier.issn2050-7534
dc.identifier.doi10.1039/C6TC00309E
dc.identifier.urihttp://hdl.handle.net/10150/615615
dc.description.abstractRecently, gradient porous silicon has been developed to meet the requirements of various applications due to its unique physical and chemical properties. In this paper, the formation mechanism and morphology of radially symmetric gradient porous silicon films fabricated using a contactless method and their dependence on different process parameters, such as HF concentration, solution pH, current density and wafer resistivity, have been investigated in detail. The design and geometry of the sample assembly allow decreasing current density radially inward on the silicon surface in contact with HF based etchant solution. In the presence of surfactants, an increase in the distribution range of porosity, pore diameter and depth was observed by increasing HF concentration or lowering pH of the etchant solution, as the formation of pores was considered to be limited by the etch rates of silicon dioxide. Gradient porous silicon was also found to be successfully formulated both at high (10 mA cm2 ) and low (3 mA cm2 ) current densities. Interestingly, the morphological gradient was not developed when dimethyl sulfoxide (instead of surfactants) was used in the etchant solution potentially due to limitations in the availability of oxidizing species at the silicon–etchant solution interface.
dc.language.isoenen
dc.publisherROYAL SOC CHEMISTRYen
dc.relation.urlhttp://xlink.rsc.org/?DOI=C6TC00309Een
dc.rightsCC-BY: This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. Copyright is held by the author(s) or the publisher. If your intended use exceeds the permitted uses specified by the license, contact the publisher for more information.en
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/
dc.titleThe formation mechanism of gradient porous Si in a contactless electrochemical processen
dc.typeArticleen
dc.contributor.departmentUniv Arizona, Chem & Environm Engnen
dc.contributor.departmentUniv Arizona, Mat Sci & Engnen
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRY Cen
dc.description.noteOpen access provided by RSC Gold Voucher.en
dc.description.collectioninformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.en
dc.eprint.versionFinal published versionen
refterms.dateFOA2018-09-11T14:22:00Z
html.description.abstractRecently, gradient porous silicon has been developed to meet the requirements of various applications due to its unique physical and chemical properties. In this paper, the formation mechanism and morphology of radially symmetric gradient porous silicon films fabricated using a contactless method and their dependence on different process parameters, such as HF concentration, solution pH, current density and wafer resistivity, have been investigated in detail. The design and geometry of the sample assembly allow decreasing current density radially inward on the silicon surface in contact with HF based etchant solution. In the presence of surfactants, an increase in the distribution range of porosity, pore diameter and depth was observed by increasing HF concentration or lowering pH of the etchant solution, as the formation of pores was considered to be limited by the etch rates of silicon dioxide. Gradient porous silicon was also found to be successfully formulated both at high (10 mA cm2 ) and low (3 mA cm2 ) current densities. Interestingly, the morphological gradient was not developed when dimethyl sulfoxide (instead of surfactants) was used in the etchant solution potentially due to limitations in the availability of oxidizing species at the silicon–etchant solution interface.


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CC-BY: This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. Copyright is held by the author(s) or the publisher. If your intended use exceeds the permitted uses specified by the license, contact the publisher for more information.
Except where otherwise noted, this item's license is described as CC-BY: This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. Copyright is held by the author(s) or the publisher. If your intended use exceeds the permitted uses specified by the license, contact the publisher for more information.