Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions
AffiliationUniv Arizona, Dept Phys
MetadataShow full item record
PublisherAMER INST PHYSICS
CitationEffect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions 2016, 109 (3):032401 Applied Physics Letters
JournalApplied Physics Letters
Rights© 2016 Author(s). Published by AIP Publishing.
Collection InformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at email@example.com.
AbstractThe effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that exhibited a strong (110) crystalline texture, the inserted Mo layer between Ta/CoFeB had little negative influence on the crystallization of CoFe (001), therefore combining the advantages of Mo as a good thermal barrier and Ta as a good boron sink. For optimized Mo dusting thickness, a large tunneling magnetoresistance of 208% was achieved in perpendicular magnetic tunneling junctions with superior thermal stability at 500 degrees C. Published by AIP Publishing.
NotePublished online 18 July 2016. 12 month embargo.
VersionFinal published version
SponsorsC-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program - MARCO; DARPA; National Science Foundation [ECCS-1310338]