Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures
Zhan, Q. F.
Yang, H. L.
Zuo, Z. H.
Xie, Y. L.
Liu, L. P.
Zhang, S. L.
Li, H. H.
Wang, B. M.
Wu, Y. H.
AffiliationUniv Arizona, Dept Phys
MetadataShow full item record
PublisherAMER INST PHYSICS
CitationEffect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures 2016, 109 (3):032410 Applied Physics Letters
JournalApplied Physics Letters
RightsPublished by AIP Publishing.
Collection InformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at email@example.com.
AbstractWe investigate spin-current transport with an antiferromagnetic insulator NiO thin layer by means of the spin-Hall magnetoresistance (SMR) over a wide range of temperature in Pt/NiO/Y3Fe5O12 (Pt/NiO/YIG) heterostructures. The SMR signal is comparable to that without the NiO layer as long as the temperature is near or above the blocking temperature of the NiO, indicating that the magnetic fluctuation of the insulating NiO is essential for transmitting the spin current from the Pt to YIG layer. On the other hand, the SMR signal becomes negligibly small at low temperature, and both conventional anisotropic magnetoresistance and the anomalous Hall resistance are extremely small at any temperature, implying that the insertion of the NiO has completely suppressed the Pt magnetization induced by the YIG magnetic proximity effect (MPE). The dual roles of the thin NiO layer are, to suppress the magnetic interaction or MPE between Pt and YIG, and to maintain efficient spin current transmission at high temperature. Published by AIP Publishing.
NotePublished online 22 July 2016: 12 Month Embargo
VersionFinal published version
SponsorsNational Natural Science foundation of China [11274321, 11404349, 51522105, 11374312, 51502314]; Key Research Program of the Chinese Academy of Sciences [KJZD-EW-M05]; U. S. National Science Foundation [ECCS-1404542]