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dc.contributor.authorYankowitz, Matthew
dc.contributor.authorWatanabe, K.
dc.contributor.authorTaniguchi, T.
dc.contributor.authorSan-Jose, Pablo
dc.contributor.authorLeRoy, Brian J.
dc.date.accessioned2017-01-23T23:46:34Z
dc.date.available2017-01-23T23:46:34Z
dc.date.issued2016-10-20
dc.identifier.citationPressure-induced commensurate stacking of graphene on boron nitride 2016, 7:13168 Nature Communicationsen
dc.identifier.issn2041-1723
dc.identifier.pmid27762272
dc.identifier.doi10.1038/ncomms13168
dc.identifier.urihttp://hdl.handle.net/10150/622113
dc.description.abstractCombining atomically-thin van der Waals materials into heterostructures provides a powerful path towards the creation of designer electronic devices. The interaction strength between neighbouring layers, most easily controlled through their interlayer separation, can have significant influence on the electronic properties of these composite materials. Here, we demonstrate unprecedented control over interlayer interactions by locally modifying the interlayer separation between graphene and boron nitride, which we achieve by applying pressure with a scanning tunnelling microscopy tip. For the special case of aligned or nearly-aligned graphene on boron nitride, the graphene lattice can stretch and compress locally to compensate for the slight lattice mismatch between the two materials. We find that modifying the interlayer separation directly tunes the lattice strain and induces commensurate stacking underneath the tip. Our results motivate future studies tailoring the electronic properties of van der Waals heterostructures by controlling the interlayer separation of the entire device using hydrostatic pressure.
dc.description.sponsorshipU.S. Army Research Laboratory; U.S. Army Research Office [W911NF-14-1-0653]; National Science Foundation [DMR-0953784]; Spanish Ministry of Economy and Innovation [FIS2011-23713]; Ramon y Cajal programme [RYC-2013-14645]en
dc.language.isoenen
dc.publisherNATURE PUBLISHING GROUPen
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/ncomms13168en
dc.rights© The Author(s) 2016. This work is licensed under a Creative Commons Attribution 4.0 International License.en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titlePressure-induced commensurate stacking of graphene on boron nitrideen
dc.typeArticleen
dc.contributor.departmentUniv Arizona, Dept Physen
dc.identifier.journalNature Communicationsen
dc.description.collectioninformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.en
dc.eprint.versionFinal published versionen
refterms.dateFOA2018-09-11T17:08:34Z
html.description.abstractCombining atomically-thin van der Waals materials into heterostructures provides a powerful path towards the creation of designer electronic devices. The interaction strength between neighbouring layers, most easily controlled through their interlayer separation, can have significant influence on the electronic properties of these composite materials. Here, we demonstrate unprecedented control over interlayer interactions by locally modifying the interlayer separation between graphene and boron nitride, which we achieve by applying pressure with a scanning tunnelling microscopy tip. For the special case of aligned or nearly-aligned graphene on boron nitride, the graphene lattice can stretch and compress locally to compensate for the slight lattice mismatch between the two materials. We find that modifying the interlayer separation directly tunes the lattice strain and induces commensurate stacking underneath the tip. Our results motivate future studies tailoring the electronic properties of van der Waals heterostructures by controlling the interlayer separation of the entire device using hydrostatic pressure.


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© The Author(s) 2016. This work is licensed under a Creative Commons Attribution 4.0 International License.
Except where otherwise noted, this item's license is described as © The Author(s) 2016. This work is licensed under a Creative Commons Attribution 4.0 International License.