Universal threshold for femtosecond laser ablation with oblique illumination
dc.contributor.author | Liu, Xiao-Long | |
dc.contributor.author | Cheng, Weibo | |
dc.contributor.author | Petrarca, Massimo | |
dc.contributor.author | Polynkin, Pavel | |
dc.date.accessioned | 2017-01-25T00:56:14Z | |
dc.date.available | 2017-01-25T00:56:14Z | |
dc.date.issued | 2016-10-17 | |
dc.identifier.citation | Universal threshold for femtosecond laser ablation with oblique illumination 2016, 109 (16):161604 Applied Physics Letters | en |
dc.identifier.issn | 0003-6951 | |
dc.identifier.issn | 1077-3118 | |
dc.identifier.doi | 10.1063/1.4965850 | |
dc.identifier.uri | http://hdl.handle.net/10150/622151 | |
dc.description.abstract | We quantify the dependence of the single-shot ablation threshold on the angle of incidence and polarization of a femtosecond laser beam, for three dissimilar solid-state materials: a metal, a dielectric, and a semiconductor. Using the constant, linear value of the index of refraction, we calculate the laser fluence transmitted through the air-material interface at the point of ablation threshold. We show that, in spite of the highly nonlinear ionization dynamics involved in the ablation process, the so defined transmitted threshold fluence is universally independent of the angle of incidence and polarization of the laser beam for all three material types. We suggest that angular dependence of ablation threshold can be utilized for profiling fluence distributions in ultra-intense femtosecond laser beams. Published by AIP Publishing. | |
dc.description.sponsorship | United States Air Force Office of Scientific Research [FA9550-12-1-0482, FA9550-16-1-0013]; U.S. Defense Threat Reduction Agency under program HDTRA [1-14-1-0009]; National Natural Science Foundation of China [11404335, 91538113] | en |
dc.language.iso | en | en |
dc.publisher | AMER INST PHYSICS | en |
dc.relation.url | http://aip.scitation.org/doi/10.1063/1.4965850 | en |
dc.rights | Published by AIP Publishing. | en |
dc.title | Universal threshold for femtosecond laser ablation with oblique illumination | en |
dc.type | Article | en |
dc.contributor.department | Univ Arizona, Coll Opt Sci | en |
dc.identifier.journal | Applied Physics Letters | en |
dc.description.note | Full Published Online: October 2016; 12 Month Embargo. | en |
dc.description.collectioninformation | This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu. | en |
dc.eprint.version | Final published version | en |
refterms.dateFOA | 2017-11-01T00:00:00Z | |
html.description.abstract | We quantify the dependence of the single-shot ablation threshold on the angle of incidence and polarization of a femtosecond laser beam, for three dissimilar solid-state materials: a metal, a dielectric, and a semiconductor. Using the constant, linear value of the index of refraction, we calculate the laser fluence transmitted through the air-material interface at the point of ablation threshold. We show that, in spite of the highly nonlinear ionization dynamics involved in the ablation process, the so defined transmitted threshold fluence is universally independent of the angle of incidence and polarization of the laser beam for all three material types. We suggest that angular dependence of ablation threshold can be utilized for profiling fluence distributions in ultra-intense femtosecond laser beams. Published by AIP Publishing. |