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dc.contributor.authorLiu, Xiao-Long
dc.contributor.authorCheng, Weibo
dc.contributor.authorPetrarca, Massimo
dc.contributor.authorPolynkin, Pavel
dc.date.accessioned2017-01-25T00:56:14Z
dc.date.available2017-01-25T00:56:14Z
dc.date.issued2016-10-17
dc.identifier.citationUniversal threshold for femtosecond laser ablation with oblique illumination 2016, 109 (16):161604 Applied Physics Lettersen
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/1.4965850
dc.identifier.urihttp://hdl.handle.net/10150/622151
dc.description.abstractWe quantify the dependence of the single-shot ablation threshold on the angle of incidence and polarization of a femtosecond laser beam, for three dissimilar solid-state materials: a metal, a dielectric, and a semiconductor. Using the constant, linear value of the index of refraction, we calculate the laser fluence transmitted through the air-material interface at the point of ablation threshold. We show that, in spite of the highly nonlinear ionization dynamics involved in the ablation process, the so defined transmitted threshold fluence is universally independent of the angle of incidence and polarization of the laser beam for all three material types. We suggest that angular dependence of ablation threshold can be utilized for profiling fluence distributions in ultra-intense femtosecond laser beams. Published by AIP Publishing.
dc.description.sponsorshipUnited States Air Force Office of Scientific Research [FA9550-12-1-0482, FA9550-16-1-0013]; U.S. Defense Threat Reduction Agency under program HDTRA [1-14-1-0009]; National Natural Science Foundation of China [11404335, 91538113]en
dc.language.isoenen
dc.publisherAMER INST PHYSICSen
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.4965850en
dc.rightsPublished by AIP Publishing.en
dc.titleUniversal threshold for femtosecond laser ablation with oblique illuminationen
dc.typeArticleen
dc.contributor.departmentUniv Arizona, Coll Opt Scien
dc.identifier.journalApplied Physics Lettersen
dc.description.noteFull Published Online: October 2016; 12 Month Embargo.en
dc.description.collectioninformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.en
dc.eprint.versionFinal published versionen
refterms.dateFOA2017-11-01T00:00:00Z
html.description.abstractWe quantify the dependence of the single-shot ablation threshold on the angle of incidence and polarization of a femtosecond laser beam, for three dissimilar solid-state materials: a metal, a dielectric, and a semiconductor. Using the constant, linear value of the index of refraction, we calculate the laser fluence transmitted through the air-material interface at the point of ablation threshold. We show that, in spite of the highly nonlinear ionization dynamics involved in the ablation process, the so defined transmitted threshold fluence is universally independent of the angle of incidence and polarization of the laser beam for all three material types. We suggest that angular dependence of ablation threshold can be utilized for profiling fluence distributions in ultra-intense femtosecond laser beams. Published by AIP Publishing.


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