AffiliationUniv Arizona, Coll Opt Sci
MetadataShow full item record
PublisherAMER INST PHYSICS
CitationBand offset in (Ga, In)As/Ga(As, Sb) heterostructures 2016, 120 (20):204303 Journal of Applied Physics
JournalJournal of Applied Physics
RightsPublished by AIP Publishing.
Collection InformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at firstname.lastname@example.org.
AbstractA series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature-and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k.p method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga, In) As and Ga(As, Sb) quantum wells. Published by AIP Publishing.
NotePublished Online 28 November 2016; 12 month embargo.
VersionFinal published version
SponsorsDeutsche Forschungsgemeinschaft (DFG) [Sonderforschungsbereich 1083]; DFG [GRK 1782]; Air Force Office of Scientific Research [BRI FA9550-14-1-0062]