Band offset in (Ga, In)As/Ga(As, Sb) heterostructures
Publisher
AMER INST PHYSICSCitation
Band offset in (Ga, In)As/Ga(As, Sb) heterostructures 2016, 120 (20):204303 Journal of Applied PhysicsJournal
Journal of Applied PhysicsRights
© 2016 Author(s). Published by AIP Publishing.Collection Information
This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.Abstract
A series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature-and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k.p method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga, In) As and Ga(As, Sb) quantum wells. Published by AIP Publishing.Note
Published Online 28 November 2016; 12 month embargo.ISSN
0021-89791089-7550