Band offset in (Ga, In)As/Ga(As, Sb) heterostructures
| dc.contributor.author | Gies, S. | |
| dc.contributor.author | Weseloh, M. J. | |
| dc.contributor.author | Fuchs, C. | |
| dc.contributor.author | Stolz, W. | |
| dc.contributor.author | Hader, J. | |
| dc.contributor.author | Moloney, J. V. | |
| dc.contributor.author | Koch, S. W. | |
| dc.contributor.author | Heimbrodt, W. | |
| dc.date.accessioned | 2017-02-08T00:53:41Z | |
| dc.date.available | 2017-02-08T00:53:41Z | |
| dc.date.issued | 2016-11-28 | |
| dc.identifier.citation | Band offset in (Ga, In)As/Ga(As, Sb) heterostructures 2016, 120 (20):204303 Journal of Applied Physics | en |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.issn | 1089-7550 | |
| dc.identifier.doi | 10.1063/1.4968541 | |
| dc.identifier.uri | http://hdl.handle.net/10150/622465 | |
| dc.description.abstract | A series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature-and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k.p method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga, In) As and Ga(As, Sb) quantum wells. Published by AIP Publishing. | |
| dc.description.sponsorship | Deutsche Forschungsgemeinschaft (DFG) [Sonderforschungsbereich 1083]; DFG [GRK 1782]; Air Force Office of Scientific Research [BRI FA9550-14-1-0062] | en |
| dc.language.iso | en | en |
| dc.publisher | AMER INST PHYSICS | en |
| dc.relation.url | http://aip.scitation.org/doi/10.1063/1.4968541 | en |
| dc.rights | © 2016 Author(s). Published by AIP Publishing. | en |
| dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | |
| dc.title | Band offset in (Ga, In)As/Ga(As, Sb) heterostructures | en |
| dc.type | Article | en |
| dc.contributor.department | Univ Arizona, Coll Opt Sci | en |
| dc.identifier.journal | Journal of Applied Physics | en |
| dc.description.note | Published Online 28 November 2016; 12 month embargo. | en |
| dc.description.collectioninformation | This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu. | en |
| dc.eprint.version | Final published version | en |
| refterms.dateFOA | 2017-11-29T00:00:00Z | |
| html.description.abstract | A series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature-and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k.p method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga, In) As and Ga(As, Sb) quantum wells. Published by AIP Publishing. |
