Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures
Yang, H. L.
Zhan, Q. F.
Zuo, Z. H.
Xie, Y. L.
Liu, L. P.
Zhang, S. L.
Li, H. H.
Wang, B. M.
Wu, Y. H.
AffiliationUniv Arizona, Dept Phys
MetadataShow full item record
PublisherAMER INST PHYSICS
CitationEffect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures 2016, 120 (13):133901 Journal of Applied Physics
JournalJournal of Applied Physics
RightsPublished by AIP Publishing.
Collection InformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at email@example.com.
AbstractWe report an investigation of anomalous-Hall resistance (AHR) and spin-Hall magnetoresistance (SMR) in Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The AHR of Pt/IrMn/YIG heterostructures with an antiferromagnetic inserted layer is dramatically enhanced as compared to that of the Pt/YIG bilayer. The temperature dependent AHR behavior is nontrivial, while the IrMn thickness dependent AHR displays a peak at an IrMn thickness of 3 nm. The observed SMR in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the IrMn layer (<= 3 nm) to interact with the ferromagnetic YIG layer. The lack of conventional anisotropic magnetoresistance (AMR) implies that the insertion of the IrMn layer between Pt and YIG could efficiently suppress the magnetic proximity effect (MPE) on induced Pt moments by YIG. Published by AIP Publishing.
NoteFull Published Online: October 2016; 12 Month Embargo.
VersionFinal published version
SponsorsNational Natural Science foundation of China [11274321, 11404349, 51502314, 51522105, 11374312]; Key Research Program of the Chinese Academy of Sciences [KJZD-EW-M05]; U.S. National Science Foundation [ECCS-1404542]