Author
Lammers, C.Stein, M.
Berger, C.
Möller, C.
Fuchs, C.

Ruiz Perez, A.
Rahimi-Iman, A.
Hader, J.
Moloney, J. V.
Stolz, W.
Koch, S. W.

Koch, M.
Affiliation
Univ Arizona, Coll Opt SciIssue Date
2016-12-05
Metadata
Show full item recordPublisher
AMER INST PHYSICSCitation
Gain spectroscopy of a type-II VECSEL chip 2016, 109 (23):232107 Applied Physics LettersJournal
Applied Physics LettersRights
© 2016 Author(s). Published by AIP Publishing.Collection Information
This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.Abstract
Using optical pump-white light probe spectroscopy, the gain dynamics is investigated for a vertical-external-cavity surface-emitting laser chip, which is based on a type-II heterostructure. The active region of the chip consists of a GaAs/(GaIn) As/Ga(AsSb)/(GaIn) As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by the experimental spectra. The results show a gain buildup on the type-II chip that is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from the reduced electron-hole scattering. Published by AIP Publishing.Note
12 month embargo; published online 8 December 2016ISSN
0003-69511077-3118
Version
Final published versionSponsors
Deutsche Forschungsgemeinschaft via the Collaborative Research Center 1083 [DFG:SFB1083]; AFOSR [FA9550-14-1-0062]ae974a485f413a2113503eed53cd6c53
10.1063/1.4971333