Ruiz Perez, A.
Moloney, J. V.
Koch, S. W.
AffiliationUniv Arizona, Coll Opt Sci
MetadataShow full item record
PublisherAMER INST PHYSICS
CitationGain spectroscopy of a type-II VECSEL chip 2016, 109 (23):232107 Applied Physics Letters
JournalApplied Physics Letters
RightsPublished by the American Institute of Physics
Collection InformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at firstname.lastname@example.org.
AbstractUsing optical pump-white light probe spectroscopy, the gain dynamics is investigated for a vertical-external-cavity surface-emitting laser chip, which is based on a type-II heterostructure. The active region of the chip consists of a GaAs/(GaIn) As/Ga(AsSb)/(GaIn) As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by the experimental spectra. The results show a gain buildup on the type-II chip that is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from the reduced electron-hole scattering. Published by AIP Publishing.
Note12 month embargo; published online 8 December 2016
VersionFinal published version
SponsorsDeutsche Forschungsgemeinschaft via the Collaborative Research Center 1083 [DFG:SFB1083]; AFOSR [FA9550-14-1-0062]