Gain spectroscopy of a type-II VECSEL chip
dc.contributor.author | Lammers, C. | |
dc.contributor.author | Stein, M. | |
dc.contributor.author | Berger, C. | |
dc.contributor.author | Möller, C. | |
dc.contributor.author | Fuchs, C. | |
dc.contributor.author | Ruiz Perez, A. | |
dc.contributor.author | Rahimi-Iman, A. | |
dc.contributor.author | Hader, J. | |
dc.contributor.author | Moloney, J. V. | |
dc.contributor.author | Stolz, W. | |
dc.contributor.author | Koch, S. W. | |
dc.contributor.author | Koch, M. | |
dc.date.accessioned | 2017-03-01T23:55:13Z | |
dc.date.available | 2017-03-01T23:55:13Z | |
dc.date.issued | 2016-12-05 | |
dc.identifier.citation | Gain spectroscopy of a type-II VECSEL chip 2016, 109 (23):232107 Applied Physics Letters | en |
dc.identifier.issn | 0003-6951 | |
dc.identifier.issn | 1077-3118 | |
dc.identifier.doi | 10.1063/1.4971333 | |
dc.identifier.uri | http://hdl.handle.net/10150/622689 | |
dc.description.abstract | Using optical pump-white light probe spectroscopy, the gain dynamics is investigated for a vertical-external-cavity surface-emitting laser chip, which is based on a type-II heterostructure. The active region of the chip consists of a GaAs/(GaIn) As/Ga(AsSb)/(GaIn) As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by the experimental spectra. The results show a gain buildup on the type-II chip that is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from the reduced electron-hole scattering. Published by AIP Publishing. | |
dc.description.sponsorship | Deutsche Forschungsgemeinschaft via the Collaborative Research Center 1083 [DFG:SFB1083]; AFOSR [FA9550-14-1-0062] | en |
dc.language.iso | en | en |
dc.publisher | AMER INST PHYSICS | en |
dc.relation.url | http://scitation.aip.org/content/aip/journal/apl/109/23/10.1063/1.4971333 | en |
dc.rights | © 2016 Author(s). Published by AIP Publishing. | en |
dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | |
dc.title | Gain spectroscopy of a type-II VECSEL chip | en |
dc.type | Article | en |
dc.contributor.department | Univ Arizona, Coll Opt Sci | en |
dc.identifier.journal | Applied Physics Letters | en |
dc.description.note | 12 month embargo; published online 8 December 2016 | en |
dc.description.collectioninformation | This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu. | en |
dc.eprint.version | Final published version | en |
dc.contributor.institution | Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany | |
dc.contributor.institution | Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany | |
dc.contributor.institution | Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany | |
dc.contributor.institution | Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany | |
dc.contributor.institution | Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany | |
dc.contributor.institution | NAsPIII/V GmbH, Hans-Meerwein-Straße, 35032 Marburg, Germany | |
dc.contributor.institution | Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany | |
dc.contributor.institution | College of Optical Sciences, University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721, USA | |
dc.contributor.institution | College of Optical Sciences, University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721, USA | |
dc.contributor.institution | Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany | |
dc.contributor.institution | Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany | |
dc.contributor.institution | Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany | |
refterms.dateFOA | 2017-12-09T00:00:00Z | |
html.description.abstract | Using optical pump-white light probe spectroscopy, the gain dynamics is investigated for a vertical-external-cavity surface-emitting laser chip, which is based on a type-II heterostructure. The active region of the chip consists of a GaAs/(GaIn) As/Ga(AsSb)/(GaIn) As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by the experimental spectra. The results show a gain buildup on the type-II chip that is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from the reduced electron-hole scattering. Published by AIP Publishing. |