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dc.contributor.authorAlmasi, H.
dc.contributor.authorSun, C. L.
dc.contributor.authorLi, X.
dc.contributor.authorNewhouse-Illige, T.
dc.contributor.authorBi, C.
dc.contributor.authorPrice, K. C.
dc.contributor.authorNahar, S.
dc.contributor.authorGrezes, C.
dc.contributor.authorHu, Q.
dc.contributor.authorKhalili Amiri, P.
dc.contributor.authorWang, K. L.
dc.contributor.authorVoyles, P. M.
dc.contributor.authorWang, W. G.
dc.date.accessioned2017-06-08T19:40:49Z
dc.date.available2017-06-08T19:40:49Z
dc.date.issued2017-04-21
dc.identifier.citationPerpendicular magnetic tunnel junction with W seed and capping layers 2017, 121 (15):153902 Journal of Applied Physicsen
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.doi10.1063/1.4981878
dc.identifier.urihttp://hdl.handle.net/10150/624048
dc.description.abstractWe present a study on perpendicular magnetic tunnel junctions with W as buffer and capping layers. A tunneling magnetoresistance of 138% and an interfacial magnetic anisotropy of 1.67 erg/cm(2) were obtained in optimally annealed samples. However, after extended annealing at 420 degrees C, junctions with W layers showed extremely small resistance due to interdiffusion of W into the MgO barrier. In contrast, in Ta-based junctions, the MgO barrier remained structurally stable despite disappearance of magnetoresistance after extended annealing due to loss of perpendicular magnetic anisotropy. Compared with conventional tunnel junctions with in-plane magnetic anisotropy, the evolution of tunneling conductance suggests that the relatively low magnetoresistance in perpendicular tunnel junctions is related to the lack of highly polarized Delta(1) conducting channel developed in the initial stage of annealing. Published by AIP Publishing.
dc.description.sponsorshipC-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program; MARCO; DARPA; National Science Foundation [ECCS-1310338]; Inston, Inc., through a Phase II Small Business Innovation Research award from the National Science Foundationen
dc.language.isoenen
dc.publisherAMER INST PHYSICSen
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.4981878en
dc.rightsRights managed by AIP Publishing LLC.en
dc.subjectMagnetic tunnel junctionsen
dc.subjectTantalumen
dc.subjectTunnelingen
dc.subjectMagnetic annealingen
dc.subjectMagnetic anisotropyen
dc.titlePerpendicular magnetic tunnel junction with W seed and capping layersen
dc.typeArticleen
dc.contributor.departmentUniv Arizona, Dept Physen
dc.identifier.journalJournal of Applied Physicsen
dc.description.note12 month embargo; published online 20 April 2017en
dc.description.collectioninformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.en
dc.eprint.versionFinal published versionen
refterms.dateFOA2018-04-21T00:00:00Z
html.description.abstractWe present a study on perpendicular magnetic tunnel junctions with W as buffer and capping layers. A tunneling magnetoresistance of 138% and an interfacial magnetic anisotropy of 1.67 erg/cm(2) were obtained in optimally annealed samples. However, after extended annealing at 420 degrees C, junctions with W layers showed extremely small resistance due to interdiffusion of W into the MgO barrier. In contrast, in Ta-based junctions, the MgO barrier remained structurally stable despite disappearance of magnetoresistance after extended annealing due to loss of perpendicular magnetic anisotropy. Compared with conventional tunnel junctions with in-plane magnetic anisotropy, the evolution of tunneling conductance suggests that the relatively low magnetoresistance in perpendicular tunnel junctions is related to the lack of highly polarized Delta(1) conducting channel developed in the initial stage of annealing. Published by AIP Publishing.


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