A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors
Affiliation
Univ Arizona, Dept Aerosp & Mech EngnIssue Date
2017-05-28
Metadata
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AMER INST PHYSICSCitation
A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors 2017, 121 (20):204501 Journal of Applied PhysicsJournal
Journal of Applied PhysicsRights
Rights managed by AIP Publishing LLC.Collection Information
This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.Abstract
In this work, a hybrid simulation technique is introduced for the electrothermal study of a two-dimensional GaN-on-SiC high electron mobility transistor. Detailed electron and phonon transport is considered by coupled electron and phonon Monte Carlo simulations in the transistor region. For regions away from the transistor, the conventional Fourier's law is used for thermal analysis to minimize the computational load. This hybrid simulation strategy can incorporate the physical phenomena over multiple length scales, including phonon generation by hot electrons in the conduction channel, frequency-dependent phonon transport in the transistor region, and heat transfer across the whole macroscale device. Published by AIP Publishing.Note
12 month embargo; published online 22 May 2017ISSN
0021-89791089-7550
Version
Final published versionSponsors
Defense Advanced Research Agency (DARPA) [FA8650-15-1-7523]Additional Links
http://aip.scitation.org/doi/10.1063/1.4983761ae974a485f413a2113503eed53cd6c53
10.1063/1.4983761