A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors
AffiliationUniv Arizona, Dept Aerosp & Mech Engn
MetadataShow full item record
PublisherAMER INST PHYSICS
CitationA hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors 2017, 121 (20):204501 Journal of Applied Physics
JournalJournal of Applied Physics
RightsRights managed by AIP Publishing LLC.
Collection InformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at email@example.com.
AbstractIn this work, a hybrid simulation technique is introduced for the electrothermal study of a two-dimensional GaN-on-SiC high electron mobility transistor. Detailed electron and phonon transport is considered by coupled electron and phonon Monte Carlo simulations in the transistor region. For regions away from the transistor, the conventional Fourier's law is used for thermal analysis to minimize the computational load. This hybrid simulation strategy can incorporate the physical phenomena over multiple length scales, including phonon generation by hot electrons in the conduction channel, frequency-dependent phonon transport in the transistor region, and heat transfer across the whole macroscale device. Published by AIP Publishing.
Note12 month embargo; published online 22 May 2017
VersionFinal published version
SponsorsDefense Advanced Research Agency (DARPA) [FA8650-15-1-7523]