Show simple item record

dc.contributor.authorNewhouse-Illige, T.
dc.contributor.authorLiu, Yaohua
dc.contributor.authorXu, M.
dc.contributor.authorReifsnyder Hickey, D.
dc.contributor.authorKundu, A.
dc.contributor.authorAlmasi, H.
dc.contributor.authorBi, Chong
dc.contributor.authorWang, X.
dc.contributor.authorFreeland, J. W.
dc.contributor.authorKeavney, D. J.
dc.contributor.authorSun, C. J.
dc.contributor.authorXu, Y. H.
dc.contributor.authorRosales, M.
dc.contributor.authorCheng, X. M.
dc.contributor.authorZhang, Shufeng
dc.contributor.authorMkhoyan, K. A.
dc.contributor.authorWang, W. G.
dc.date.accessioned2017-06-23T18:01:33Z
dc.date.available2017-06-23T18:01:33Z
dc.date.issued2017-05-16
dc.identifier.citationVoltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions 2017, 8:15232 Nature Communicationsen
dc.identifier.issn2041-1723
dc.identifier.pmid28508882
dc.identifier.doi10.1038/ncomms15232
dc.identifier.urihttp://hdl.handle.net/10150/624333
dc.description.abstractMagnetic interlayer coupling is one of the central phenomena in spintronics. It has been predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of electric currents, thereby offering a promising low energy magnetization switching mechanism. Here we present the experimental demonstration of voltage-controlled interlayer coupling in a new perpendicular magnetic tunnel junction system with a GdOx tunnel barrier, where a large perpendicular magnetic anisotropy and a sizable tunnelling magnetoresistance have been achieved at room temperature. Owing to the interfacial nature of the magnetism, the ability to move oxygen vacancies within the barrier, and a large proximity-induced magnetization of GdOx, both the magnitude and the sign of the interlayer coupling in these junctions can be directly controlled by voltage. These results pave a new path towards achieving energy-efficient magnetization switching by controlling interlayer coupling.
dc.description.sponsorshipC-SPIN, one of six centres of STARnet; Semiconductor Research Corporation programme - MARCO; DARPA; National Science Foundation [ECCS-1554011]; Division of Scientific User Facilities of the Office of Basic Energy Sciences (BES), U.S. Department of Energy (DOE); NSF CAREER award [1053854]; DOE Office of Science [DE-AC02-06CH11357]; NSF through the UMN MRSEC program [DMR-1420013]; CSE Minnesota Nano Center, UMN - NSF through the NNIN programen
dc.language.isoenen
dc.publisherNATURE PUBLISHING GROUPen
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/ncomms15232en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License.en
dc.subjectElectronic devicesen
dc.subjectMagnetic properties and materialsen
dc.subjectSpintronicsen
dc.titleVoltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctionsen
dc.typeArticleen
dc.contributor.departmentUniv Arizona, Dept Physen
dc.identifier.journalNature Communicationsen
dc.description.collectioninformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.en
dc.eprint.versionFinal published versionen
refterms.dateFOA2018-07-01T15:08:13Z
html.description.abstractMagnetic interlayer coupling is one of the central phenomena in spintronics. It has been predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of electric currents, thereby offering a promising low energy magnetization switching mechanism. Here we present the experimental demonstration of voltage-controlled interlayer coupling in a new perpendicular magnetic tunnel junction system with a GdOx tunnel barrier, where a large perpendicular magnetic anisotropy and a sizable tunnelling magnetoresistance have been achieved at room temperature. Owing to the interfacial nature of the magnetism, the ability to move oxygen vacancies within the barrier, and a large proximity-induced magnetization of GdOx, both the magnitude and the sign of the interlayer coupling in these junctions can be directly controlled by voltage. These results pave a new path towards achieving energy-efficient magnetization switching by controlling interlayer coupling.


Files in this item

Thumbnail
Name:
ncomms15232.pdf
Size:
1003.Kb
Format:
PDF
Description:
FInal Published Version

This item appears in the following Collection(s)

Show simple item record