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    Reaction of aqueous ammonium sulfide on SiGe 25%

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    Author
    Heslop, Stacy L.
    Peckler, Lauren
    Muscat, Anthony J.
    Affiliation
    Univ Arizona, Dept Chem & Biochem
    Univ Arizona, Dept Chem & Environm Engn
    Issue Date
    2017-05
    Keywords
    Germanium
    Acids
    Elemental semiconductors
    Surface cleaning
    X-ray photoelectron spectroscopy
    
    Metadata
    Show full item record
    Publisher
    A V S AMER INST PHYSICS
    Citation
    Reaction of aqueous ammonium sulfide on SiGe 25% 2017, 35 (3):03E110 Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
    Journal
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
    Rights
    © 2017 American Vacuum Society.
    Collection Information
    This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.
    Abstract
    SiGe 25% substrates were treated with aqueous solutions of ammonium sulfide with and without added acid to understand the adsorption of sulfur on the surface. X-ray photoelectron spectroscopy showed no sulfide layer was deposited from aqueous (NH4)(2)S alone and instead both Si and Ge oxides formed during immersion in the sulfur solution. The addition of hydrofluoric and hydrochloric acids dropped the pH from 10 to 8 and deposited sulfides, yet increased the oxide coverage on the surface and preferentially formed Ge oxides. The sulfur coverage grew with increasing concentrations of acid in the aqueous (NH4)(2)S. The simultaneous deposition of O and S is suspected to be the result of oxidized sulfur species in solution. Metal-insulator-semiconductor capacitor (MISCAP) devices were fabricated to test the electrical consequences of aqueous ammonium sulfide wet chemistries on SiGe. MISCAPs treated with acidic ammonium sulfide solutions contained fewer interface defects in the valence band region. The defect density (D-it) was on the order of 10(+12) cm(-2) eV(-1). The flat band voltage shift was lower after the acidic ammonium sulfide treatment, despite the presence of surface oxides. Adsorption of S and potentially O improved the stability of the surface and made it less electrically active. (C) 2017 American Vacuum Society.
    Note
    12 month embargo; published online: 27 April 2017
    ISSN
    0734-2101
    1520-8559
    DOI
    10.1116/1.4982223
    Version
    Final published version
    Sponsors
    Lam Research Corporation
    Additional Links
    http://avs.scitation.org/doi/10.1116/1.4982223
    ae974a485f413a2113503eed53cd6c53
    10.1116/1.4982223
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