Ultrafast relaxation of hot phonons in graphene-hBN heterostructures
AffiliationUniv Arizona, Dept Phys
MetadataShow full item record
PublisherAMER INST PHYSICS
CitationUltrafast relaxation of hot phonons in graphene-hBN heterostructures 2017, 5 (5):056101 APL Materials
Rights© Author(s) 2017. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
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AbstractFast carrier cooling is important for high power graphene based devices. Strongly coupled optical phonons play a major role in the relaxation of photo-excited carriers in graphene. Heterostructures of graphene and hexagonal boron nitride (hBN) have shown exceptional mobility and high saturation current, which makes them ideal for applications, but the effect of the hBN substrate on carrier cooling mechanisms is not understood. We track the cooling of hot photo-excited carriers in graphene-hBN heterostructures using ultrafast pump-probe spectroscopy. We find that the carriers cool down four times faster in the case of graphene on hBN than on a silicon oxide substrate thus overcoming the hot phonon bottleneck that plagues cooling in graphene devices. (C) 2017 Author(s).
NoteOpen access journal. 12 month embargo; published online: 8 May 2017
VersionFinal published version
SponsorsU.S. Army Research Laboratory; U.S. Army Research Office [W911NF-14-1-0653]; National Science Foundation (NSF) [PHY 1505556]