Ultrafast relaxation of hot phonons in graphene-hBN heterostructures
| dc.contributor.author | Golla, Dheeraj | |
| dc.contributor.author | Brasington, Alexandra | |
| dc.contributor.author | LeRoy, Brian J. | |
| dc.contributor.author | Sandhu, Arvinder | |
| dc.date.accessioned | 2017-07-06T23:36:49Z | |
| dc.date.available | 2017-07-06T23:36:49Z | |
| dc.date.issued | 2017-05-01 | |
| dc.identifier.citation | Ultrafast relaxation of hot phonons in graphene-hBN heterostructures 2017, 5 (5):056101 APL Materials | en |
| dc.identifier.issn | 2166-532X | |
| dc.identifier.doi | 10.1063/1.4982738 | |
| dc.identifier.uri | http://hdl.handle.net/10150/624659 | |
| dc.description.abstract | Fast carrier cooling is important for high power graphene based devices. Strongly coupled optical phonons play a major role in the relaxation of photo-excited carriers in graphene. Heterostructures of graphene and hexagonal boron nitride (hBN) have shown exceptional mobility and high saturation current, which makes them ideal for applications, but the effect of the hBN substrate on carrier cooling mechanisms is not understood. We track the cooling of hot photo-excited carriers in graphene-hBN heterostructures using ultrafast pump-probe spectroscopy. We find that the carriers cool down four times faster in the case of graphene on hBN than on a silicon oxide substrate thus overcoming the hot phonon bottleneck that plagues cooling in graphene devices. (C) 2017 Author(s). | |
| dc.description.sponsorship | U.S. Army Research Laboratory; U.S. Army Research Office [W911NF-14-1-0653]; National Science Foundation (NSF) [PHY 1505556] | en |
| dc.language.iso | en | en |
| dc.publisher | AMER INST PHYSICS | en |
| dc.relation.url | http://aip.scitation.org/doi/10.1063/1.4982738 | en |
| dc.rights | © Author(s) 2017. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license. | en |
| dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
| dc.subject | Graphene | en |
| dc.subject | Phonons | en |
| dc.subject | Heterojunctions | en |
| dc.subject | Reflectivity | en |
| dc.subject | Pump probe experiments | en |
| dc.title | Ultrafast relaxation of hot phonons in graphene-hBN heterostructures | en |
| dc.type | Article | en |
| dc.contributor.department | Univ Arizona, Dept Phys | en |
| dc.identifier.journal | APL Materials | en |
| dc.description.note | Open access journal. 12 month embargo; published online: 8 May 2017 | en |
| dc.description.collectioninformation | This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu. | en |
| dc.eprint.version | Final published version | en |
| html.description.abstract | Fast carrier cooling is important for high power graphene based devices. Strongly coupled optical phonons play a major role in the relaxation of photo-excited carriers in graphene. Heterostructures of graphene and hexagonal boron nitride (hBN) have shown exceptional mobility and high saturation current, which makes them ideal for applications, but the effect of the hBN substrate on carrier cooling mechanisms is not understood. We track the cooling of hot photo-excited carriers in graphene-hBN heterostructures using ultrafast pump-probe spectroscopy. We find that the carriers cool down four times faster in the case of graphene on hBN than on a silicon oxide substrate thus overcoming the hot phonon bottleneck that plagues cooling in graphene devices. (C) 2017 Author(s). |
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