TEM EDS analysis of epitaxially-grown self-assembled indium islands
AffiliationUniv Arizona, Coll Opt Sci
MetadataShow full item record
PublisherAMER INST PHYSICS
CitationTEM EDS analysis of epitaxially-grown self-assembled indium islands 2017, 7 (5):055005 AIP Advances
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AbstractEpitaxially-grown self-assembled indium nanostructures, or islands, show promise as nanoantennas. The elemental composition and internal structure of indium islands grown on gallium arsenide are explored using Transmission Electron Microscopy (TEM) Energy Dispersive Spectroscopy (EDS). Several sizes of islands are examined, with larger islands exhibiting high (>94%) average indium purity and smaller islands containing inhomogeneous gallium and arsenic contamination. These results enable more accurate predictions of indium nanoantenna behavior as a function of growth parameters. (C) 2017 Author(s).
Note12 month embargo; published online 9 May 2017.
VersionFinal published version
SponsorsAir Force Office of Scientific Research (AFOSR) [FA9550-13-1-0003, 12RY05COR]; National Science Foundation Atomic, Molecular and Optical Physics [NSF-AMOP 1205031]; Engineering Research Center for Integrated Access Networks (NSF ERC-CIAN) [EEC-0812072]; Arizona Technology and Research Initiative Funding (TRIF); Department of Defense through the National Defense Science and Engineering Graduate (NDSEG) Fellowship Program; Department of Energy (DOE) through the Office of Science Graduate Fellowship (SCGF), [DE-AC05-06OR23100]; French technology network RENATECH