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dc.contributor.authorSears, Jasmine
dc.contributor.authorGibson, Ricky
dc.contributor.authorGehl, Michael
dc.contributor.authorZandbergen, Sander
dc.contributor.authorKeiffer, Patrick
dc.contributor.authorNader, Nima
dc.contributor.authorHendrickson, Joshua
dc.contributor.authorArnoult, Alexandre
dc.contributor.authorKhitrova, Galina
dc.date.accessioned2017-07-13T18:51:12Z
dc.date.available2017-07-13T18:51:12Z
dc.date.issued2017-05
dc.identifier.citationTEM EDS analysis of epitaxially-grown self-assembled indium islands 2017, 7 (5):055005 AIP Advancesen
dc.identifier.issn2158-3226
dc.identifier.doi10.1063/1.4983492
dc.identifier.urihttp://hdl.handle.net/10150/624718
dc.description.abstractEpitaxially-grown self-assembled indium nanostructures, or islands, show promise as nanoantennas. The elemental composition and internal structure of indium islands grown on gallium arsenide are explored using Transmission Electron Microscopy (TEM) Energy Dispersive Spectroscopy (EDS). Several sizes of islands are examined, with larger islands exhibiting high (>94%) average indium purity and smaller islands containing inhomogeneous gallium and arsenic contamination. These results enable more accurate predictions of indium nanoantenna behavior as a function of growth parameters. (C) 2017 Author(s).
dc.description.sponsorshipAir Force Office of Scientific Research (AFOSR) [FA9550-13-1-0003, 12RY05COR]; National Science Foundation Atomic, Molecular and Optical Physics [NSF-AMOP 1205031]; Engineering Research Center for Integrated Access Networks (NSF ERC-CIAN) [EEC-0812072]; Arizona Technology and Research Initiative Funding (TRIF); Department of Defense through the National Defense Science and Engineering Graduate (NDSEG) Fellowship Program; Department of Energy (DOE) through the Office of Science Graduate Fellowship (SCGF), [DE-AC05-06OR23100]; French technology network RENATECHen
dc.language.isoenen
dc.publisherAMER INST PHYSICSen
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.4983492en
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.en
dc.titleTEM EDS analysis of epitaxially-grown self-assembled indium islandsen
dc.typeArticleen
dc.contributor.departmentUniv Arizona, Coll Opt Scien
dc.identifier.journalAIP Advancesen
dc.description.note12 month embargo; published online 9 May 2017.en
dc.description.collectioninformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.en
dc.eprint.versionFinal published versionen
refterms.dateFOA2018-05-10T00:00:00Z
html.description.abstractEpitaxially-grown self-assembled indium nanostructures, or islands, show promise as nanoantennas. The elemental composition and internal structure of indium islands grown on gallium arsenide are explored using Transmission Electron Microscopy (TEM) Energy Dispersive Spectroscopy (EDS). Several sizes of islands are examined, with larger islands exhibiting high (>94%) average indium purity and smaller islands containing inhomogeneous gallium and arsenic contamination. These results enable more accurate predictions of indium nanoantenna behavior as a function of growth parameters. (C) 2017 Author(s).


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