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Polarization dependent femtosecond laser modification of MBE-grown III-V nanostructures on silicon

dc.contributor.authorZandbergen, Sander R.
dc.contributor.authorGibson, Ricky
dc.contributor.authorAmirsolaimani, Babak
dc.contributor.authorMehravar, Soroush
dc.contributor.authorKeiffer, Patrick
dc.contributor.authorAzarm, Ali
dc.contributor.authorKieu, Khanh
dc.date.accessioned2017-07-27T19:25:23Z
dc.date.available2017-07-27T19:25:23Z
dc.date.issued2017-05-30
dc.identifier.citationPolarization dependent femtosecond laser modification of MBE-grown III-V nanostructures on silicon 2017, 7 (6):2102 Optical Materials Expressen
dc.identifier.issn2159-3930
dc.identifier.doi10.1364/OME.7.002102
dc.identifier.urihttp://hdl.handle.net/10150/624969
dc.description.abstractWe report a novel, polarization dependent, femtosecond laser- induced modification of surface nanostructures of indium, gallium, and arsenic grown on silicon via molecular beam epitaxy, yielding shape control from linear and circular polarization of laser excitation. Linear polarization causes an elongation effect, beyond the dimensions of the unexposed nanostructures, ranging from 88 nm to over 1 mu m, and circular polarization causes the nanostructures to flatten out or form loops of material, to diameters of approximately 195 nm. During excitation, it is also observed that the generated second and third harmonic signals from the substrate and surface nanostructures increase with exposure time. (C) 2017 Optical Society of America
dc.description.sponsorshipAir Force Office of Scientific Research (AFOSR) [FA9550-15-1-0389]en
dc.language.isoenen
dc.publisherOPTICAL SOC AMERen
dc.relation.urlhttps://www.osapublishing.org/abstract.cfm?URI=ome-7-6-2102en
dc.rights© 2017 Optical Society of America.en
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/
dc.titlePolarization dependent femtosecond laser modification of MBE-grown III-V nanostructures on siliconen
dc.typeArticleen
dc.contributor.departmentUniv Arizona, Coll Opt Scien
dc.identifier.journalOptical Materials Expressen
dc.description.noteOpen access journal.en
dc.description.collectioninformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.en
dc.eprint.versionFinal published versionen
refterms.dateFOA2018-06-23T15:25:20Z
html.description.abstractWe report a novel, polarization dependent, femtosecond laser- induced modification of surface nanostructures of indium, gallium, and arsenic grown on silicon via molecular beam epitaxy, yielding shape control from linear and circular polarization of laser excitation. Linear polarization causes an elongation effect, beyond the dimensions of the unexposed nanostructures, ranging from 88 nm to over 1 mu m, and circular polarization causes the nanostructures to flatten out or form loops of material, to diameters of approximately 195 nm. During excitation, it is also observed that the generated second and third harmonic signals from the substrate and surface nanostructures increase with exposure time. (C) 2017 Optical Society of America


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