Evolution of the electronic band structure of twisted bilayer graphene upon doping
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FInal Published Version
Affiliation
Univ Arizona, Phys DeptUniv Arizona, Coll Opt Sci
Issue Date
2017-08-08
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NATURE PUBLISHING GROUPCitation
Evolution of the electronic band structure of twisted bilayer graphene upon doping 2017, 7 (1) Scientific ReportsJournal
Scientific ReportsRights
© The Author(s) 2017. Open Access This article is licensed under a Creative Commons Attribution 4.0 International License.Collection Information
This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.Abstract
The electronic band structure of twisted bilayer graphene develops van Hove singularities whose energy depends on the twist angle between the two layers. Using Raman spectroscopy, we monitor the evolution of the electronic band structure upon doping using the G peak area which is enhanced when the laser photon energy is resonant with the energy separation of the van Hove singularities. Upon charge doping, the Raman G peak area initially increases for twist angles larger than a critical angle and decreases for smaller angles. To explain this behavior with twist angle, the energy separation of the van Hove singularities must decrease with increasing charge density demonstrating the ability to modify the electronic and optical properties of twisted bilayer graphene with doping.ISSN
2045-2322Version
Final published versionSponsors
NSF [DMR-0953784, PHY-1505556]; U.S. Army Research Laboratory; U.S. Army Research Office [W911NF-09-0333, W911NF-12-1-0345, W911NF-14-1-0653]Additional Links
http://www.nature.com/articles/s41598-017-07580-3ae974a485f413a2113503eed53cd6c53
10.1038/s41598-017-07580-3