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dc.contributor.advisorSandhu, Arvinder S.en
dc.contributor.authorGolla, Dheeraj
dc.creatorGolla, Dheerajen
dc.date.accessioned2018-01-13T01:17:15Z
dc.date.available2018-01-13T01:17:15Z
dc.date.issued2017
dc.identifier.urihttp://hdl.handle.net/10150/626303
dc.description.abstractTwo dimensional (2D) materials are poised to revolutionize the future of optics and electronics. The past decade saw intense research centered around graphene. More recently, the tide has shifted to a bigger class of two-dimensional materials including graphene but more expansive in their capabilities. The so called ‘2D material zoo’ includes metals, semi-metals, semiconductors, superconductors and insulators. The possibility of mixing and matching 2D materials to fabricate heterostructures with desirable properties is very exciting. To make devices with superior electronic, optical and thermal properties, we need to understand how the electrons, phonons and other quasi particles interact with each other and exchange energy in the femtosecond and nanosecond timescales. To measure the timescales of energy distribution and dissipation, I used ultrafast pump-probe spectroscopy to perform time-domain measurements of optical absorption. This approach allows us to understand the impact of manybody interactions on the bandstructure and carrier dynamics of 2D materials. After a brief introduction to femtosecond laser spectroscopy, I will explore the transient absorption dynamics of three classes of 2D materials: intrinsic graphene, graphene-hBN heterostructures and Transition Metal Dichalcogenides (TMDs). We will see that using pumpprobe measurements around the high energy M-point of intrinsicgraphene, we can extract the value of the acoustic deformation potential which is vital in characterizing the electron-acoustic phonon interactions. In the next part of the thesis, I will delineate the role of the substrate in the cooling dynamics in graphene devices. We will see that excited carriers in graphene on hBN substrates cool much faster that on SiO2 substrates due to faster decay of the optical phonons in graphenehBN heterostructures. These results show that graphene-hBN heterostructures can solve the hot phonon bottleneck that plagues graphene devices at high power densities. In the last part, I will demonstrate the role of phonon induced bandgap renormalization in the carrier dynamics of TMD materials and measure the timescale of phonon decay through the generation of low-energy phonons and transfer to the substrate. This study will help us understand carrier recombination in TMD devices under high-bias conditions which show great potential in opto-electronic applications such as photovoltaics, LEDs etc.
dc.language.isoen_USen
dc.publisherThe University of Arizona.en
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en
dc.subject2D materialsen
dc.subjectgrapheneen
dc.subjectTransition Metal Dichalcogenidesen
dc.subjectUltrafast spectroscopyen
dc.titleUltrafast Dynamics of Two Dimensional Materialsen_US
dc.typetexten
dc.typeElectronic Dissertationen
thesis.degree.grantorUniversity of Arizonaen
thesis.degree.leveldoctoralen
dc.contributor.committeememberSandhu, Arvinder S.en
dc.contributor.committeememberLeRoy, Brian J.en
dc.contributor.committeememberSchaibley, John R.en
dc.contributor.committeememberWang, Weigangen
thesis.degree.disciplineGraduate Collegeen
thesis.degree.disciplinePhysicsen
thesis.degree.namePh.D.en
refterms.dateFOA2018-07-18T00:19:28Z
html.description.abstractTwo dimensional (2D) materials are poised to revolutionize the future of optics and electronics. The past decade saw intense research centered around graphene. More recently, the tide has shifted to a bigger class of two-dimensional materials including graphene but more expansive in their capabilities. The so called ‘2D material zoo’ includes metals, semi-metals, semiconductors, superconductors and insulators. The possibility of mixing and matching 2D materials to fabricate heterostructures with desirable properties is very exciting. To make devices with superior electronic, optical and thermal properties, we need to understand how the electrons, phonons and other quasi particles interact with each other and exchange energy in the femtosecond and nanosecond timescales. To measure the timescales of energy distribution and dissipation, I used ultrafast pump-probe spectroscopy to perform time-domain measurements of optical absorption. This approach allows us to understand the impact of manybody interactions on the bandstructure and carrier dynamics of 2D materials. After a brief introduction to femtosecond laser spectroscopy, I will explore the transient absorption dynamics of three classes of 2D materials: intrinsic graphene, graphene-hBN heterostructures and Transition Metal Dichalcogenides (TMDs). We will see that using pumpprobe measurements around the high energy M-point of intrinsicgraphene, we can extract the value of the acoustic deformation potential which is vital in characterizing the electron-acoustic phonon interactions. In the next part of the thesis, I will delineate the role of the substrate in the cooling dynamics in graphene devices. We will see that excited carriers in graphene on hBN substrates cool much faster that on SiO2 substrates due to faster decay of the optical phonons in graphenehBN heterostructures. These results show that graphene-hBN heterostructures can solve the hot phonon bottleneck that plagues graphene devices at high power densities. In the last part, I will demonstrate the role of phonon induced bandgap renormalization in the carrier dynamics of TMD materials and measure the timescale of phonon decay through the generation of low-energy phonons and transfer to the substrate. This study will help us understand carrier recombination in TMD devices under high-bias conditions which show great potential in opto-electronic applications such as photovoltaics, LEDs etc.


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