High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
Weseloh, M. J.
Moloney, J. V.
Koch, S. W.
AffiliationUniv Arizona, Coll Opt Sci
MetadataShow full item record
PublisherNATURE PUBLISHING GROUP
CitationHigh-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm 2018, 8 (1) Scientific Reports
Rights© The Author(s) 2018. This article is licensed under a Creative Commons Attribution 4.0 International License.
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AbstractElectrical injection lasers emitting in the 1.3 mu m wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn) As type-II double "W"-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broadarea edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 mu m long laser bar in the temperature range between 10 degrees C and 100 degrees C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm(2) at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T-0 = (132 +/- 3) K over the whole temperature range and T-1 = (159 +/- 13) K between 10 degrees C and 70 degrees C and T-1 = (40 +/- 1) K between 80 degrees C and 100 degrees C.
VersionFinal published version
SponsorsDeutsche Forschungsgemeinschaft (DFG) [Sonderforschungsbereich 1083]; U.S. Air Force Office of Scientific Research [FA9550-16-C-0021, FA9550-14-1-0062]
Except where otherwise noted, this item's license is described as © The Author(s) 2018. This article is licensed under a Creative Commons Attribution 4.0 International License.