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dc.contributor.authorFuchs, C.
dc.contributor.authorBrüggemann, A.
dc.contributor.authorWeseloh, M. J.
dc.contributor.authorBerger, C.
dc.contributor.authorMöller, C.
dc.contributor.authorReinhard, S.
dc.contributor.authorHader, J.
dc.contributor.authorMoloney, J. V.
dc.contributor.authorBäumner, A.
dc.contributor.authorKoch, S. W.
dc.contributor.authorStolz, W.
dc.date.accessioned2018-02-12T21:55:01Z
dc.date.available2018-02-12T21:55:01Z
dc.date.issued2018-01-23
dc.identifier.citationHigh-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm 2018, 8 (1) Scientific Reportsen
dc.identifier.issn2045-2322
dc.identifier.pmid29362369
dc.identifier.doi10.1038/s41598-018-19189-1
dc.identifier.urihttp://hdl.handle.net/10150/626575
dc.description.abstractElectrical injection lasers emitting in the 1.3 mu m wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn) As type-II double "W"-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broadarea edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 mu m long laser bar in the temperature range between 10 degrees C and 100 degrees C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm(2) at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T-0 = (132 +/- 3) K over the whole temperature range and T-1 = (159 +/- 13) K between 10 degrees C and 70 degrees C and T-1 = (40 +/- 1) K between 80 degrees C and 100 degrees C.
dc.description.sponsorshipDeutsche Forschungsgemeinschaft (DFG) [Sonderforschungsbereich 1083]; U.S. Air Force Office of Scientific Research [FA9550-16-C-0021, FA9550-14-1-0062]en
dc.language.isoenen
dc.publisherNATURE PUBLISHING GROUPen
dc.relation.urlhttp://www.nature.com/articles/s41598-018-19189-1en
dc.rights© The Author(s) 2018. This article is licensed under a Creative Commons Attribution 4.0 International License.en
dc.titleHigh-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µmen
dc.typeArticleen
dc.contributor.departmentUniv Arizona, Coll Opt Scien
dc.identifier.journalScientific Reportsen
dc.description.collectioninformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.en
dc.eprint.versionFinal published versionen
refterms.dateFOA2018-06-11T21:33:41Z
html.description.abstractElectrical injection lasers emitting in the 1.3 mu m wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn) As type-II double "W"-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broadarea edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 mu m long laser bar in the temperature range between 10 degrees C and 100 degrees C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm(2) at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T-0 = (132 +/- 3) K over the whole temperature range and T-1 = (159 +/- 13) K between 10 degrees C and 70 degrees C and T-1 = (40 +/- 1) K between 80 degrees C and 100 degrees C.


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