AuthorChow, Colin M.
Jones, Aaron M.
Schaibley, John R.
Mandrus, David G.
AffiliationUniv Arizona, Dept Phys
MetadataShow full item record
PublisherNATURE PUBLISHING GROUP
CitationPhonon-assisted oscillatory exciton dynamics in monolayer MoSe2 2017, 1 (1) npj 2D Materials and Applications
Rights© The Author(s) 2017. Open Access This article is licensed under a Creative Commons Attribution 4.0 International License.
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AbstractIn monolayer semiconductor transition metal dichalcogenides, the exciton-phonon interaction strongly affects the photocarrier dynamics. Here, we report on an unusual oscillatory enhancement of the neutral exciton photoluminescence with the excitation laser frequency in monolayer MoSe2. The frequency of oscillation matches that of the M-point longitudinal acoustic phonon, LA(M), suggesting the significance of zone-edge acoustic phonons and hence the deformation potential in exciton-phonon coupling in MoSe2. Moreover, oscillatory behavior is observed in the steady-state emission linewidth and in time-resolved PLE data, which reveals variation with excitation energy in the exciton lifetime. These results clearly expose the key role played by phonons in the exciton formation and relaxation dynamics of two-dimensional van der Waals semiconductors.
NoteOpen access journal.
VersionFinal published version
SponsorsDepartment of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division [DE-SC0008145, SC0012509]; Croucher Foundation (Croucher Innovation Award); HKU ORA; RGC of Hong Kong [HKU17305914P, AoE/P-04/08]; UGC of Hong Kong [HKU17305914P, AoE/P-04/08]; US DoE, BES, Materials Sciences and Engineering Division; MRSEC Program of the NSF [DMR-1120923]; State of Washington; Boeing Distinguished Professorship