Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdO X barriers
Xu, Y. H.
LeRoy, Brian J.
Wang, W. G.
AffiliationUniv Arizona, Dept Phys
MetadataShow full item record
PublisherAMER INST PHYSICS
CitationTemperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdO X barriers 2018, 112 (7):072404 Applied Physics Letters
JournalApplied Physics Letters
RightsRights managed by AIP Publishing.
Collection InformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at firstname.lastname@example.org.
AbstractPerpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here, we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier. Published by AIP Publishing.
Note12 month embargo; published online: 13 February 2018.
VersionFinal published version
SponsorsC-SPIN, one of the six centers of STARnet, a Semiconductor Research Corporation program - MARCO; DARPA; National Science Foundation [ECCS-1554011, ECCS-1607911, 1337371]; Division of Scientific User Facilities of the Office of Basic Energy Sciences (BES), U.S. Department of Energy (DOE)