VECSEL design for high peak power ultrashort mode-locked operation
AffiliationUniv Arizona, Coll Opt Sci
Univ Arizona, Dept Math
MetadataShow full item record
PublisherAMER INST PHYSICS
CitationAppl. Phys. Lett. 112, 262105 (2018); doi: 10.1063/1.5033456
JournalAPPLIED PHYSICS LETTERS
RightsRights managed by AIP Publishing.
Collection InformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at email@example.com.
AbstractThe generation of mode-locked pulses in vertical external-cavity surface-emitting lasers with a semiconductor saturable absorber mirror is studied by numerically solving the Maxwell semiconductor Bloch equations describing the propagating light field coupled to the electron-hole-pair excitations in the quantum wells. High peak-power sub-100 fs mode-locked pulses are realized through optimizing the gain chip design. The unequal spacing of up to four quantum wells in a given field antinode leads to a broad linear gain profile and reduced intracavity dispersion. The proposed designs are found to be robust with regard to uncontrollable growth uncertainties. Published by AIP Publishing.
Note12 month embargo; published online: 27 June 2018
VersionFinal published version
SponsorsAir Force Office of Scientific Research [FA9550-17-1-0246]