Electron Monte Carlo simulations of nanoporous Si thin films—The influence of pore-edge charges
AffiliationUniv Arizona, Dept Aerosp & Mech Engn
MetadataShow full item record
PublisherAMER INST PHYSICS
CitationJ. Appl. Phys. 125, 064301 (2019); https://doi.org/10.1063/1.5078951
JournalJOURNAL OF APPLIED PHYSICS
Rights© 2019 Author(s).
Collection InformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at firstname.lastname@example.org.
AbstractElectron transport within nanostructures can be important for various engineering applications, such as thermoelectrics and nanoelectronics. In theoretical studies, electron Monte Carlo simulations are widely used as an alternative approach to solving the electron Boltzmann transport equation, where the energy-dependent electron scattering, exact structure shape, and detailed electric field distribution can be fully incorporated. In this work, such electron Monte Carlo simulations are employed to predict the electrical conductivity of periodic nanoporous Si films that have been widely studied for thermoelectric applications. The focus is on the influence of pore-edge charges on the electron transport. The results are further compared to our previous analytical modeling [Hao et al., J. Appl. Phys. 121, 094308 (2017)], where the pore-edge electric field has its own scattering rate to be added to the scattering rates of other mechanisms. Published under license by AIP Publishing.
Note12 month embargo; published online: 12 February 2019
VersionFinal published version
SponsorsU.S. Air Force Office of Scientific Research [FA9550-16-1-0025]; National Science Foundation (NSF) [CBET-1651840]