On the observation of dispersion in tunable second-order nonlinearities of silicon-rich nitride thin films
Publisher
AMER INST PHYSICSCitation
APL Photon. 4, 036101 (2019); doi: 10.1063/1.5053704Journal
APL PHOTONICSRights
© 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.Collection Information
This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.Abstract
We present experimental results on second-harmonic generation in non-stoichiometric, silicon-rich nitride films. The asdeposited film presents a second-order nonlinear coefficient, or chi((2)), as high as 8 pm/V. This value can be widely tuned using the electric field induced second harmonic effect, and a maximum value of 22.7 pm/V was achieved with this technique. We further illustrate that the second-order nonlinear coefficient exhibited by these films can be highly dispersive in nature and require further study and analysis to evaluate their viability for in-waveguide applications at telecommunication wavelengths. (C) 2019 Author(s).Note
Open access journalISSN
2378-0967Version
Final published versionSponsors
Defense Advanced Research Projects Agency (DARPA); National Science Foundation (NSF); NSF ERC CIAN; NSF's NNCI San Diego Nanotechnology Infrastructure (SDNI); NSF Graduate Research Fellowship [DGE-1143953]; Office of Naval Research (ONR) Multidisciplinary University Research Initiative (MURI); Army Research Office (ARO); Cymer CorporationScopus Count
Collections
Except where otherwise noted, this item's license is described as © 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.