On the observation of dispersion in tunable second-order nonlinearities of silicon-rich nitride thin films
Cromey, Benjamin M.
Puckett, Matthew W.
AffiliationUniv Arizona, Coll Opt Sci
MetadataShow full item record
PublisherAMER INST PHYSICS
CitationAPL Photon. 4, 036101 (2019); doi: 10.1063/1.5053704
Rights© 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
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AbstractWe present experimental results on second-harmonic generation in non-stoichiometric, silicon-rich nitride films. The asdeposited film presents a second-order nonlinear coefficient, or chi((2)), as high as 8 pm/V. This value can be widely tuned using the electric field induced second harmonic effect, and a maximum value of 22.7 pm/V was achieved with this technique. We further illustrate that the second-order nonlinear coefficient exhibited by these films can be highly dispersive in nature and require further study and analysis to evaluate their viability for in-waveguide applications at telecommunication wavelengths. (C) 2019 Author(s).
NoteOpen access journal
VersionFinal published version
SponsorsDefense Advanced Research Projects Agency (DARPA); National Science Foundation (NSF); NSF ERC CIAN; NSF's NNCI San Diego Nanotechnology Infrastructure (SDNI); NSF Graduate Research Fellowship [DGE-1143953]; Office of Naval Research (ONR) Multidisciplinary University Research Initiative (MURI); Army Research Office (ARO); Cymer Corporation