Control of the nonlinear response of bulk GaAs induced by long-wavelength infrared pulses
AffiliationUniv Arizona, Coll Opt Sci
MetadataShow full item record
PublisherOPTICAL SOC AMER
CitationD. Matteo, J. Pigeon, S. Ya. Tochitsky, U. Huttner, M. Kira, S. W. Koch, J. V. Moloney, and C. Joshi, "Control of the nonlinear response of bulk GaAs induced by long-wavelength infrared pulses," Opt. Express 27, 30462-30472 (2019)
RightsCopyright © 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Collection InformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at email@example.com.
AbstractThe nonlinear optical response of GaAs is studied using extremely nonresonant 10 mu m laser pulses with peak intensities greater than 2 GW/cm(2). We observe over an order of magnitude enhancement in the four-wave mixing efficiency by decreasing the CO2 laser beat-wave frequency. This enhancement is attributed to currents of photoexcited unbound carriers modulated at the beat frequency, confirmed by measurements of nonlinear absorption at this long wavelength as well as a fully microscopic analysis of the excitation dynamics. Modeling of such nonperturbative semiconductor-laser interactions predicts that further decreasing the beat frequency can increase the nonlinear response and allow for its control over two orders of magnitude. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
NoteOpen access journal
VersionFinal published version
SponsorsUnited States Department of Defense, Air Force Office of Scientific Research (AFOSR) [FA9550-16-1-0139 DEF, FA9550-19-1-0032]; MURI Office of Naval Research [NOOO 14-17-1-2705]; Deutsche Forschungsgemeinschaft German Research Foundation (DFG) [SFB 1083]