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    Detection properties of photoconductive antennas fabricated on low-temperature-grown GaAs and ErAs:GaAs at subterahertz band

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    Author
    Zhang, Jitao
    Tuo, Mingguang
    Liang, Min
    Xin, Hao
    Affiliation
    Univ Arizona, Dept Elect & Comp Engn
    Issue Date
    2020-01-25
    Keywords
    terahertz
    photoconductive antenna
    detection
    low-temperature-grown GaAs
    ErAs
    
    Metadata
    Show full item record
    Publisher
    SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
    Citation
    Zhang, J., Tuo, M., Liang, M., & Xin, H. (2020). Detection properties of photoconductive antennas fabricated on low-temperature-grown GaAs and ErAs: GaAs at subterahertz band. Optical Engineering, 59(6), 061619.
    Journal
    OPTICAL ENGINEERING
    Rights
    © 2020 SPIE.
    Collection Information
    This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.
    Abstract
    Terahertz (THz) spectroscopy with high sensitivity is essential for biological application considering the strong absorption and scattering effects therein. As the most commonly used THz detector, the photoconductive antenna's (PCA) response greatly relies on the properties of the substrate's material. THz detection properties of the PCAs fabricated on low-temperature-grown GaAs (LT-GaAs) and ErAs:GaAs superlattices were compared at the sub-THz band. The detection efficiency of the PCAs with regard to incident laser power was characterized. In addition, using the PCAs as detectors, the signal-to-noise ratio (SNR) and dynamic range (DR) of a terahertz time-domain spectroscopy were quantified. The result indicates that the PCA detector with LT-GaAs has higher efficiency than the one with ErAs:GaAs. Consequently, the corresponding THz spectrometer has better SNR and DR. This result is contrary to the previous report, in which enhanced detection efficiency was observed with ErAs:GaAs-based PCA, which is probably due to the different structures of ErAs:GaAs superlattices used in the experiment. (C) 2020 Society of Photo-Optical Instrumentation Engineers (SPIE)
    ISSN
    0091-3286
    DOI
    10.1117/1.oe.59.6.061619
    Version
    Final published version
    Sponsors
    National Science Foundation
    ae974a485f413a2113503eed53cd6c53
    10.1117/1.oe.59.6.061619
    Scopus Count
    Collections
    UA Faculty Publications

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