Detection properties of photoconductive antennas fabricated on low-temperature-grown GaAs and ErAs:GaAs at subterahertz band
Affiliation
Univ Arizona, Dept Elect & Comp EngnIssue Date
2020-01-25
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Zhang, J., Tuo, M., Liang, M., & Xin, H. (2020). Detection properties of photoconductive antennas fabricated on low-temperature-grown GaAs and ErAs: GaAs at subterahertz band. Optical Engineering, 59(6), 061619.Journal
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© 2020 SPIE.Collection Information
This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.Abstract
Terahertz (THz) spectroscopy with high sensitivity is essential for biological application considering the strong absorption and scattering effects therein. As the most commonly used THz detector, the photoconductive antenna's (PCA) response greatly relies on the properties of the substrate's material. THz detection properties of the PCAs fabricated on low-temperature-grown GaAs (LT-GaAs) and ErAs:GaAs superlattices were compared at the sub-THz band. The detection efficiency of the PCAs with regard to incident laser power was characterized. In addition, using the PCAs as detectors, the signal-to-noise ratio (SNR) and dynamic range (DR) of a terahertz time-domain spectroscopy were quantified. The result indicates that the PCA detector with LT-GaAs has higher efficiency than the one with ErAs:GaAs. Consequently, the corresponding THz spectrometer has better SNR and DR. This result is contrary to the previous report, in which enhanced detection efficiency was observed with ErAs:GaAs-based PCA, which is probably due to the different structures of ErAs:GaAs superlattices used in the experiment. (C) 2020 Society of Photo-Optical Instrumentation Engineers (SPIE)ISSN
0091-3286Version
Final published versionSponsors
National Science Foundationae974a485f413a2113503eed53cd6c53
10.1117/1.oe.59.6.061619