Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions
Myers, Jason C
Chien, C L
Wang, W G
AffiliationUniv Arizona, Dept Phys
MetadataShow full item record
PublisherAMER PHYSICAL SOC
CitationXu, M., Li, M., Khanal, P., Habiboglu, A., Insana, B., Xiong, Y., ... & Wang, W. G. (2020). Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions. Physical review letters, 124(18), 187701.
JournalPHYSICAL REVIEW LETTERS
Rights© 2020 American Physical Society
Collection InformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at firstname.lastname@example.org.
AbstractWe demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)O-x formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly magnetized CoFeB allows sensitive detection of the exchange bias. We find that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.
VersionFinal published version
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