Propagation Induced Dephasing in Semiconductor High-Harmonic Generation
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PhysRevLett.125.083901.pdf
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Final Published Version
Author
Kilen, IsakKolesik, Miroslav
Hader, Jorg
Moloney, Jerome
Huttner, Ulrich
Hagen, Maria K.
Koch, Stephan W.
Affiliation
Univ Arizona, Wyant Coll Opt SciIssue Date
2020-08
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AMER PHYSICAL SOCCitation
Kilen, I., Kolesik, M., Hader, J., Moloney, J. V., Huttner, U., Hagen, M. K., & Koch, S. W. (2020). Propagation Induced Dephasing in Semiconductor High-Harmonic Generation. Physical review letters, 125(8), 083901.Journal
PHYSICAL REVIEW LETTERSRights
© 2020 American Physical Society.Collection Information
This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.Abstract
The influence of propagation on the nonperturbative high-harmonic features in long-wavelength strong pulse excited semiconductors is studied using a fully microscopic approach. For sample lengths exceeding the wavelength of the exciting light, it is shown that the propagation effectively acts as a very strong additional dephasing that reduces the relative height of the emission plateau up to six orders of magnitude. This propagation induced dephasing clarifies the need to use extremely short polarization decay times for the quantitative analysis of experimental observations.Note
Immediate accessISSN
0031-9007EISSN
1079-7114PubMed ID
32909805Version
Final published versionae974a485f413a2113503eed53cd6c53
10.1103/PhysRevLett.125.083901
