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dc.contributor.authorLiebscher, Sven C.
dc.contributor.authorBannow, Lars C.
dc.contributor.authorHader, Jörg
dc.contributor.authorMoloney, Jerome V.
dc.contributor.authorKoch, Stephan W.
dc.date.accessioned2021-05-04T19:30:44Z
dc.date.available2021-05-04T19:30:44Z
dc.date.issued2020-11-02
dc.identifier.citationLiebscher, S. C., Bannow, L. C., Hader, J., Moloney, J. V., & Koch, S. W. (2020). Extension of the LDA-1/2 method to the material class of bismuth containing III–V semiconductors. AIP Advances, 10(11), 115003.en_US
dc.identifier.issn2158-3226
dc.identifier.doi10.1063/5.0024843
dc.identifier.urihttp://hdl.handle.net/10150/658118
dc.description.abstractThe local density approximation-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative example of Ga(SbBi) with Bi concentrations below 10%, it is shown that this method works very efficiently, especially due to its reasonably low demand on computer memory. The resulting band structure and wavefunctions are used to compute the interaction matrix elements that serve as input to the microscopic calculations of the optical properties and intrinsic losses relevant for the optoelectronic applications of dilute bismides.en_US
dc.description.sponsorshipDeutsche Forschungsgemeinschaften_US
dc.language.isoenen_US
dc.publisherAMER INST PHYSICSen_US
dc.rights© 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleExtension of the LDA-1/2 method to the material class of bismuth containing III–V semiconductorsen_US
dc.typeArticleen_US
dc.identifier.eissn2158-3226
dc.contributor.departmentUniv Arizona, Wyant Coll Opt Scien_US
dc.identifier.journalAIP ADVANCESen_US
dc.description.noteOpen access articleen_US
dc.description.collectioninformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.en_US
dc.eprint.versionFinal published versionen_US
dc.source.journaltitleAIP Advances
dc.source.volume10
dc.source.issue11
dc.source.beginpage115003
refterms.dateFOA2021-05-04T19:30:46Z


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© 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Except where otherwise noted, this item's license is described as © 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).