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dc.contributor.authorEnde, Martin
dc.contributor.authorChanmuang N., Chutimun
dc.contributor.authorReiners, Peter W.
dc.contributor.authorZamyatin, Dmitry A.
dc.contributor.authorGain, Sarah E.M.
dc.contributor.authorWirth, Richard
dc.contributor.authorNasdala, Lutz
dc.date.accessioned2021-12-03T22:02:41Z
dc.date.available2021-12-03T22:02:41Z
dc.date.issued2021-12
dc.identifier.citationEnde, M., Chanmuang N., C., Reiners, P. W., Zamyatin, D. A., Gain, S. E. M., Wirth, R., & Nasdala, L. (2021). Dry annealing of radiation-damaged zircon: Single-crystal X-ray and Raman spectroscopy study. Lithos.en_US
dc.identifier.issn0024-4937
dc.identifier.doi10.1016/j.lithos.2021.106523
dc.identifier.urihttp://hdl.handle.net/10150/662460
dc.description.abstractStructural reconstitution upon dry thermal annealing of mildly to strongly radiation-damaged, gem-quality zircon from Sri Lanka has been studied by single-crystal X-ray diffraction and Raman spectroscopy. Results of structure refinement of a strongly radiation-damaged zircon (sample GZ5, calculated alpha dose ~4 × 1018 g−1) indicate the existence of an interstitial oxygen site that is sparsely occupied (about 4% of all O atoms). Annealing of this sample at Ta (annealing temperature) = 700 °C has resulted in nearly complete recrystallization of its amorphous volume fraction and significant decrease in the occupation of O-interstitial sites. For all samples studied, annealing up to Ta ≤ 650–700 °C is characterised by preferred recovery of Raman shifts (compared to Raman FWHMs; full width at half band maximum) and extensive contraction of the unit-cell volume, in particular along unit-cell dimension a. This low-T annealing is dominated by epitaxial growth of the crystalline volume fraction at the expense of the amorphous volume fraction, and general recovery of low-energy defects. During annealing at Ta = 700–1400 °C there is preferred recovery of Raman FWHMs (compared to Raman shifts) and only mild unit-cell contraction. High-T annealing is dominated by the recovery of high-energy defects such as recombination of cation Frenkel pairs. Here, unit-cell parameter a shows a remarkable behaviour (namely, mild re-increase at Ta = 700–1150 °C and mild final shrinking at Ta = 1000–1400 °C), which is attributed to enhanced contortion of ZrO8 polyhedrons due to cation repulsion. The combined data set of Raman band and unit-cell parameter presented herein will help analysts to assign Raman spectra of annealed unknowns to certain recovery stages.en_US
dc.language.isoenen_US
dc.publisherElsevier BVen_US
dc.rights© 2021 The Authors. Published by Elsevier B.V.en_US
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en_US
dc.subjectAnnealingen_US
dc.subjectPhotoluminescenceen_US
dc.subjectRadiation damageen_US
dc.subjectRaman spectroscopyen_US
dc.subjectSingle-crystal X-ray diffractionen_US
dc.subjectZirconen_US
dc.titleDry annealing of radiation-damaged zircon: Single-crystal X-ray and Raman spectroscopy studyen_US
dc.typeArticleen_US
dc.contributor.departmentDepartment of Geosciences, University of Arizonaen_US
dc.identifier.journalLithosen_US
dc.description.note24 month embargo; available online: 28 October 2021en_US
dc.description.collectioninformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.en_US
dc.eprint.versionFinal accepted manuscripten_US
dc.identifier.piiS0024493721005661
dc.source.journaltitleLithos
dc.source.volume406-407
dc.source.beginpage106523


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