Application of the Holomorphic Tauc-Lorentz-Urbach Function to Extract the Optical Constants of Amorphous Semiconductor Thin Films
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Author
Ballester, M.García, M.
Márquez, A.P.
Blanco, E.
Fernández, S.M.
Minkov, D.
Katsaggelos, A.K.
Cossairt, O.
Willomitzer, F.
Márquez, E.
Affiliation
Wyant College of Optical Sciences, University of ArizonaIssue Date
2022Keywords
amorphous semiconductorsdielectric function
optical properties
Tauc–Lorentz model
Tauc–Lorentz–Urbach model
thin-film characterization
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Ballester, M., García, M., Márquez, A. P., Blanco, E., Fernández, S. M., Minkov, D., Katsaggelos, A. K., Cossairt, O., Willomitzer, F., & Márquez, E. (2022). Application of the Holomorphic Tauc-Lorentz-Urbach Function to Extract the Optical Constants of Amorphous Semiconductor Thin Films. Coatings, 12(10).Journal
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Copyright © 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).Collection Information
This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.Abstract
The Tauc–Lorentz–Urbach (TLU) dispersion model allows us to build a dielectric function from only a few parameters. However, this dielectric function is non-analytic and presents some mathematical drawbacks. As a consequence of this issue, the model becomes inaccurate. In the present work, we will adopt a procedure to conveniently transform the TLU model into a self-consistent dispersion model. The transformation involves the integration of the original TLU imaginary dielectric function (Formula presented.) by using a Lorentzian-type function of semi-width, (Formula presented.). This novel model is analytic and obeys the other necessary mathematical requirements of the optical constants of solid-state materials. The main difference with the non-analytic TLU model occurs at values of the photon energy near or lower than that of the bandgap energy (within the Urbach absorption region). In particular, this new model allows us to reliably extend the optical characterization of amorphous-semiconductor thin films within the limit to zero photon energy. To the best of our knowledge, this is the first time that the analytic TLU model has been successfully used to accurately determine the optical constants of unhydrogenated a-Si films using only their normal-incidence transmission spectra. © 2022 by the authors.Note
Open access journalISSN
2079-6412Version
Final published versionae974a485f413a2113503eed53cd6c53
10.3390/coatings12101549
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Except where otherwise noted, this item's license is described as Copyright © 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).