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dc.contributor.authorYuan, M.
dc.contributor.authorRafailov, M.K.
dc.contributor.authorBinder, R.
dc.date.accessioned2024-03-22T01:45:50Z
dc.date.available2024-03-22T01:45:50Z
dc.date.issued2023-11-03
dc.identifier.citationMingrui Yuan, Michael K. Rafailov, Rolf Binder; Physics of photovoltaic signal modifications in p–n photodiodes. J. Appl. Phys. 7 November 2023; 134 (17): 174503. https://doi.org/10.1063/5.0171614
dc.identifier.issn0021-8979
dc.identifier.doi10.1063/5.0171614
dc.identifier.urihttp://hdl.handle.net/10150/671501
dc.description.abstractThe photovoltaic signal is an important characteristic of photodetectors, including but not limited to those that are based on p-n or p-i-n photodiodes. In an open-circuit configuration, pulsed excitation of the detector with ultrafast (femto or nanosecond) pulses leads to a photovoltaic signal that decays slowly (micro-second time scale). If the physics in the detector is dominated by the recombination of the photo-excited charge carriers, one expects the signal to decay without changing its sign. However, some experiments using short-pulse excitation have found that photovoltaic signals can undergo a sign change as a function of time following excitation, with positive signals immediately following the excitation, turning to negative signals several microseconds later. Here, we study various physical effects (density, temperature, electrostriction, pressure, photostriction, and bandgap renormalization) and determine their effect on photovoltaic signals. If, following ultrafast excitation, the carrier density and temperature are increased, and during relaxation the system reaches a state sufficiently close to the quasi-thermal equilibrium in which the carrier density is still elevated, but smaller than the intrinsic thermal equilibrium density at the elevated temperature, then the signal can become negative. © 2023 Author(s).
dc.language.isoen
dc.publisherAmerican Institute of Physics Inc.
dc.rights© 2023 Author(s). Published under an exclusive license by AIP Publishing.
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/
dc.titlePhysics of photovoltaic signal modifications in p-n photodiodes
dc.typeArticle
dc.typetext
dc.contributor.departmentWyant College of Optical Sciences, University of Arizona
dc.identifier.journalJournal of Applied Physics
dc.description.note12 month embargo; first published 03 November 2023
dc.description.collectioninformationThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.
dc.eprint.versionFinal Published Version
dc.source.journaltitleJournal of Applied Physics
refterms.dateFOA2024-03-22T01:45:50Z


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