The impact of boron doping in the tunneling magnetoresistance of Heusler alloy Co2FeAl
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Author
Habiboglu, A.Chandak, Y.
Khanal, P.
Larsen, B.
Zhou, B.
Eckel, C.
Cutshall, J.
Warrilow, K.
O’Brien, J.
Hong, B.
Schaibley, J.R.
Leroy, B.J.
Wang, W.
Affiliation
Department of Physics, University of ArizonaIssue Date
2023-12-28
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American Institute of Physics Inc.Citation
Ali Habiboglu, Yash Chandak, Pravin Khanal, Brecken Larsen, Bowei Zhou, Carter Eckel, Jacob Cutshall, Kennedy Warrilow, John O’Brien, Brady Hong, John R. Schaibley, Brian J. Leroy, Weigang Wang; The impact of boron doping in the tunneling magnetoresistance of Heusler alloy Co2FeAl. J. Appl. Phys. 28 December 2023; 134 (24): 243904. https://doi.org/10.1063/5.0175184Journal
Journal of Applied PhysicsRights
© 2023 Author(s). Published under an exclusive license by AIP Publishing.Collection Information
This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.Abstract
Heusler alloy-based magnetic tunnel junctions have the potential to provide high spin polarization, small damping, and fast switching. In this study, junctions with a ferromagnetic electrode of Co2FeAl were fabricated via room-temperature sputtering on Si/SiO2 substrates. The effect of boron doping on Co2FeAl magnetic tunnel junctions was investigated for different boron concentrations. The surface roughness determined by atomic force microscope, and the analysis of x-ray diffraction measurement on the Co2FeAl thin film reveals critical information about the interface. The Co2FeAl layer was deposited on the bottom and on the top of the insulating MgO layer as two different sample structures to compare the impact of the boron doping on different layers through tunneling magnetoresistance measurements. The doping of boron in Co2FeAl had a large positive impact on the structural and magneto-transport properties of the junctions, with reduced interfacial roughness and substantial improvement in tunneling magnetoresistance. In samples annealed at low temperature, a two-level magnetoresistance was also observed. This is believed to be related to the memristive effect of the tunnel barrier. The findings of this study have practical uses for the design and fabrication of magnetic tunnel junctions with improved magneto-transport properties. © 2023 Author(s).Note
12 month embargo; first published 28 December 2023ISSN
0021-8979Version
Final Published versionae974a485f413a2113503eed53cd6c53
10.1063/5.0175184