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    Gauge Invariant Formulation of the Semiconductor Bloch Equations

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    PhysRevLett.131.236902.pdf
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    Author
    Parks, A.M.
    Moloney, J.V.
    Brabec, T.
    Affiliation
    Wyant College of Optical Sciences, University of Arizona
    Issue Date
    2023-12-05
    
    Metadata
    Show full item record
    Publisher
    American Physical Society
    Citation
    A. M. Parks, J. V. Moloney, and T. Brabec Phys. Rev. Lett. 131, 236902
    Journal
    Physical Review Letters
    Rights
    © 2023 American Physical Society.
    Collection Information
    This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.
    Abstract
    We derive gauge invariant semiconductor Bloch equations (GI-SBEs) that contain only gauge invariant band structure; shift vectors, and triple phase products. The validity and utility of the GI-SBEs is demonstrated in intense laser driven solids with broken inversion symmetry and nontrivial topology. The GI-SBEs present a useful platform for modeling and interpreting light-matter interactions in solids, in which the gauge freedom of the Bloch basis functions obscures physics and creates numerical obstacles. © 2023 American Physical Society.
    Note
    Immediate access
    ISSN
    0031-9007
    PubMed ID
    38134772
    DOI
    10.1103/PhysRevLett.131.236902
    Version
    Final Published Version
    ae974a485f413a2113503eed53cd6c53
    10.1103/PhysRevLett.131.236902
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