Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers

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Author
Zhou, B.
Khanal, P.
Benally, O.J.
Lyu, D.
Gopman, D.B.
Enriquez, A.
Habiboglu, A.
Warrilow, K.
Wang, J.-P.
Wang, W.-G.
Affiliation
Department of Physics, University of Arizona
Issue Date
2023-03-01

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Publisher
Nature Research
Citation
Zhou, B., Khanal, P., Benally, O.J. et al. Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers. Sci Rep 13, 3454 (2023). https://doi.org/10.1038/s41598-023-29752-0
Journal
Scientific Reports
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© The Author(s) 2023. This article is licensed under a Creative Commons Attribution 4.0 International License.
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This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at repository@u.library.arizona.edu.
Abstract
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver unique functionality. Here we report the study of magnetic tunnel junctions with Nb as the heavy metal layers. An interfacial perpendicular magnetic anisotropy energy density of 1.85 mJ/m2 was obtained in Nb/CoFeB/MgO heterostructures. The tunneling magnetoresistance was evaluated in junctions with different thickness combinations and different annealing conditions. An optimized magnetoresistance of 120% was obtained at room temperature, with a damping parameter of 0.011 determined by ferromagnetic resonance. In addition, spin-transfer torque switching has also been successfully observed in these junctions with a quasistatic switching current density of 7.3 ×105 A/cm2. © 2023, The Author(s).
Note
Open access journal
ISSN
2045-2322
PubMed ID
36859656
DOI
10.1038/s41598-023-29752-0
Version
Final Published Version
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© The Author(s) 2023. This article is licensed under a Creative Commons Attribution 4.0 International License.
Except where otherwise noted, this item's license is described as © The Author(s) 2023. This article is licensed under a Creative Commons Attribution 4.0 International License.