Fabrication and Integration Strategies for Atomically Precise Graphene Nanoribbon Field-Effect Transistors

Abstract

Bottom-up synthesized, atomically precise graphene nanoribbons (GNRs) provide a powerful platform for studying electronic behavior in low-dimensional quantum systems and advancing next-generation nanoelectronic technologies. With their well-defined atomic structure, tunable bandgap, and excellent charge transport properties, GNRs are strong candidates for future low-power, high-performance electronics. Yet, despite their theoretical promise, experimental device performance remains limited. Bridging this gap requires advances in both materials synthesis and device fabrication. In this Thesis, I present our efforts to address these challenges through the development of integration strategies for GNR field-effect transistors (GNRFETs). I will first introduce a double-resist lithography process forintegrating 7- and 9-atom-wide armchair GNRs into FETs with sub-30 nm channel lengths in a local back-gate geometry. Next, I will discuss how this process was adopted to study GNR-FETs in two publications. The first paper demonstrated the long-term stability of passivated GNR devices, while the second enabled GNR integration via a sustainable, wafer-scale, and etch-free transfer method. Finally, I will describe a metal electrode transfer technique designed to enable scalable fabrication without direct metal deposition on the ribbons, aiming to reduce structural damage and improve the contact–channel interface. I will conclude by outlining the broader implications of this work, remaining challenges, and future directions toward realizing GNR-based nanoelectronics.